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MCP2021A-500E

Microchip Tech · LIN Transceivers · DFN-8-EP(4x4)

MCP2021A-500E from Microchip Tech, in a DFN-8-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RXD output Receive Data Output is a standard CMOS output that follows the state of the LBUS pin.
2 CS/LWAKE input Chip Select and Local Wake-up Input is a TTL-level, high-voltage-tolerant input that controls device state transitions and should not be tied directly to VREG.
3 VREG power_out Positive supply voltage regulator output provides +5.0 V or +3.3 V at 70 mA regulated voltage.
4 TXD input Transmit Data Input is a TTL-level, HV-compliant input with adaptive pull-up (about 4.2 V internal) that drives LBUS low when TXD is low and is HV-compliant up to 30 V.
5 VSS power_in Ground pin.
6 LBUS bidirectional LIN Bus pin is a bidirectional, HV open-collector output with current limitation, controlled by TXD, with controlled edge slopes to reduce emission.
7 VBB power_in Battery Positive Supply Voltage pin, which requires an external series diode to prevent reverse powering of the device.
8 FAULT/TXE bidirectional Fault Detect Output/Transmitter Enable Input is an HV-tolerant open-drain output (up to 30 V) that places the device in Transmitter Off mode when driven low, and a 10 kΩ external pull-up is recommended.
9 EP passive Exposed Thermal Pad, listed for the 4x4 DFN package in the pin function table; the datasheet gives no electrical function for it.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package DFN-8-EP(4x4)
Category Communication Interface Chip/UART/485/232
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Voltage on RXD and RESET (max VREG + 0.3) VIN -0.3 V 15
DC Voltage on TXD, CS/LWAKE, FAULT/TXE VIN -0.3 40 V 15
Battery Voltage, continuous, non-operating VBB -0.3 40 V continuous, non-operating (Note 1) 15
Battery Voltage, non-operating VBB -0.3 43 V LIN bus recessive, no regulator load, t < 60s (Note 2) 15
Battery Voltage, transient ISO 7637 Test 1 VBB -100 V ISO 7637 Test 1 15
Battery Voltage, transient ISO 7637 Test 2a VBB 75 V ISO 7637 Test 2a 15
Battery Voltage, transient ISO 7637 Test 3a VBB -150 V ISO 7637 Test 3a 15
Battery Voltage, transient ISO 7637 Test 3b VBB 100 V ISO 7637 Test 3b 15
Bus Voltage, continuous VLBUS -18 30 V 15
Bus Voltage, transient VLBUS -27 43 V Note 3 (ISO 7637/1 load dump, t < 500 ms) 15
Bus Short Circuit Current Limit ILBUS 200 mA 15
ESD protection on LIN, VBB -15 15 kV IEC 61000-4-2 (Note 4) 15
Supply voltage VBB (specified range) VBB 6 18 V all DC/AC limits specified for VBB = 6.0V to 18.0V 16
Specified Temperature Range TA -40 125 C 21
Maximum Junction Temperature TJ 150 C 21
Storage Temperature Range TA -65 150 C 21
Short Circuit Recovery Time tTHERM 1.5 5 ms 21
VBB Quiescent Operating Current IBBQ 200 µA IOUT = 0 mA; LBUS recessive; VREG = 5.0V 16
VBB Ready Current IBBRD 100 µA IOUT = 0 mA; LBUS recessive; VREG = 5.0V 16
VBB Transmitter-Off Current IBBTO 100 µA voltage regulator on, transmitter off, receiver on, FAULT/TXE = VIL, CS = VIH, VREG = 5.0V 16
VBB Power-Down Current IBBPD 4.5 8 µA voltage regulator off, receiver on and transmitter off, FAULT/TXE = VIH, TXD = VIH, CS = VIL 16
VBB Current with VSS Floating IBBNOGND -1 1 mA VBB = 12V, GND to VBB, VLIN = 0, 18V 16
High-Level Input Voltage (TXD, FAULT/TXE) (max VREG + 0.3) VIH 2 V 16
Low-Level Input Voltage (TXD, FAULT/TXE) VIL -0.3 0.8 V 16
High-Level Input Voltage (CS/LWAKE) (max VBB) VIH 2 V through a current-limiting resistor 16
Low-Level Input Voltage (CS/LWAKE) VIL -0.3 0.8 V 16
Low-Level Output Voltage (RXD) (x VREG) VOLRXD 0.2 x VREG IOL = 2 mA 17
Low-Level Output Voltage (FAULT/TXE) VOLOD 1 V IOL = 4 mA 17
High-Level Input Voltage (LBUS) (x VBB) VIH(LBUS) 0.6 x VBB recessive state 17
Low-Level Input Voltage (LBUS) (max 0.4 x VBB) VIL(LBUS) -8 0.4 V dominant state 17
Low-Level Output Current (LBUS) IOL(LBUS) 40 200 mA output voltage = 0.1 VBB, VBB = 12V 17
Pull-Up Current on Input (LBUS) IPU(LBUS) -180 -72 µA @ VIH(LBUS) = 0.7 VBB, VBB = 12V; ~30 k internal pull-up 17
Short Circuit Current Limit ISC 50 200 mA Note 1 17
High-Level Output Voltage (LBUS) (x VBB) VOH(LBUS) 0.8 x VBB 17
Driver Dominant Voltage V_HISUP V_HISUP 1.2 V VBB = 18V, RLOAD = 1000 17
Wake-Up Voltage Threshold on LIN Bus VWK(LBUS) 3.4 V wake-up from Power-Down mode (Note 3) 18
Capacitance of Slave Node CSLAVE 50 pF Note 2 18
Slave Termination RSLAVE 20 30 47 k Note 2 17
Receiver Center Voltage (x VBB) VBUS_CNT 0.475 0.5 0.525 x VBB VBUS_CNT = (VIL(LBUS)+VIH(LBUS))/2 17
Input Leakage Current (receiver, recessive bus level) IBUS_PAS_REC -20 20 µA driver off; 8V < VBB < 18V; 8V < VBUS < 18V 17
Input Leakage Current (receiver, dominant bus level) IBUS_PAS_DOM -1 mA driver off; VBUS = 0V; VBB = 12V 17
Voltage Regulator 5.0V Output Voltage Range VREG 4.85 5 5.15 V 0 mA < IOUT < 70 mA 18
Voltage Regulator 5.0V Line Regulation VOUT1 10 50 mV IOUT = 1 mA; 6.0V < VBB < 18V 18
Voltage Regulator 5.0V Load Regulation VOUT2 10 50 mV 5 mA < IOUT < 70 mA; 6.3V < VBB < 12V 18
Shutdown Voltage Threshold (5.0V) VSD 3.5 4 V see Figure 1-5 (Note 2) 18
Input Voltage to Turn-Off Output (5.0V) VOFF 3.9 4.5 V 18
Input Voltage to Turn-On Output (5.0V) VON 5.25 6 V 18
Slope Rising and Falling Edges tSLOPE 3.5 22.5 µs 7.3V <= VBB <= 18V 20
Propagation Delay of Transmitter tTRANSPD 5 µs tTRANSPD = max. (tTRANSPDR or tTRANSPDF) 20
Propagation Delay of Receiver tRECPD 6 µs tRECPD = max. (tRECPDR or tRECPDF) 20
Time to Sample FAULT/TXE for Bus Conflict Reporting tFAULT 32.5 µs tFAULT = max. (tTRANSPD + tSLOPE + tRECPD) 20
Duty Cycle 1 @ 20.0 kbps D1 0.396 %tBIT THREC(MAX) = 0.744 x VBB, THDOM(MAX) = 0.581 x VBB, VBB = 7.0V, 18V; tBIT = 50 µs 20
Duty Cycle 2 @ 20.0 kbps D2 0.581 %tBIT THREC(MAX) = 0.284 x VBB, THDOM(MAX) = 0.422 x VBB, VBB = 7.6V, 18V; tBIT = 50 µs 20
Duty Cycle 3 @ 10.4 kbps D3 0.417 %tBIT THREC(MAX) = 0.778 x VBB, THDOM(MAX) = 0.616 x VBB, VBB = 7.0V, 18V; tBIT = 96 µs 20
Duty Cycle 4 @ 10.4 kbps D4 0.59 %tBIT THREC(MAX) = 0.251 x VBB, THDOM(MAX) = 0.389 x VBB, VBB = 7.6V, 18V; tBIT = 96 µs 21
Bus Activity to Voltage Regulator Enabled tBACTIVE 35 200 µs 21
Voltage Regulator Enabled to Ready tVEVR 300 1200 µs Note 1: CREG = 4.7 µF, no resistor load 21
Chip Select to Ready Mode tCSR 230 µs 21
Short Circuit to Shutdown tSHUTDOWN 20 100 µs 21
Thermal Resistance, 8L-DFN JA 48 C/W 21

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin f) MCP2021A-500E/P: 5.0V, 8-lead PDIP package g) MCP2021A-330E/SN: 3.3V, 8-lead SOIC package 45

CAD (KiCad official)

  • Symbol: MCP2021A-500E
  • Footprint: Package_DFN_QFN:DFN-8-1EP_4x4mm_P0.8mm_EP2.5x3.6mm
  • 3D model: DFN-8-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: mcp2021a-500e-etched.step / mcp2021a-500e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcp2021a-500e.step / mcp2021a-500e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (48 pp, sha256 3c5e8b3bb6f80ae5, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF