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Contents

README

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MC74AC573DWR2G

onsemi · Buffer/Driver/Transceiver · SOIC-20-300mil

MC74AC573DWR2G from onsemi, in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE input 3-state output enable input; LOW enables the outputs, HIGH puts them in high impedance without affecting latch data entry.
2 D0 input Data input 0, enters the latch when LE is HIGH.
3 D1 input Data input 1, enters the latch when LE is HIGH.
4 D2 input Data input 2, enters the latch when LE is HIGH.
5 D3 input Data input 3, enters the latch when LE is HIGH.
6 D4 input Data input 4, enters the latch when LE is HIGH.
7 D5 input Data input 5, enters the latch when LE is HIGH.
8 D6 input Data input 6, enters the latch when LE is HIGH.
9 D7 input Data input 7, enters the latch when LE is HIGH.
10 GND power_in Ground reference for supply and all voltages.
11 LE input Latch enable input; HIGH makes latches transparent, LOW stores the data present at the HIGH-to-LOW transition.
12 O7 tri_state 3-state latch output 7, sources/sinks 24 mA.
13 O6 tri_state 3-state latch output 6, sources/sinks 24 mA.
14 O5 tri_state 3-state latch output 5, sources/sinks 24 mA.
15 O4 tri_state 3-state latch output 4, sources/sinks 24 mA.
16 O3 tri_state 3-state latch output 3, sources/sinks 24 mA.
17 O2 tri_state 3-state latch output 2, sources/sinks 24 mA.
18 O1 tri_state 3-state latch output 1, sources/sinks 24 mA.
19 O0 tri_state 3-state latch output 0, sources/sinks 24 mA.
20 VCC power_in Positive supply; 2.0 to 6.0 V for AC, 4.5 to 5.5 V for ACT (absolute maximum 7.0 V).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-20-300mil
Category Logic ICs
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Supply Voltage VCC -0.5 7 V Referenced to GND 3
DC Input Voltage VIN -0.5 5.5 V -0.5 to VCC +0.5 V 3
DC Output Voltage VOUT -0.5 5.5 V -0.5 to VCC +0.5 V 3
DC Input Diode Current IIK -20 20 mA ±20 mA 3
DC Output Diode Current IOK -50 50 mA ±50 mA 3
DC Output Sink/Source Current IOUT -50 50 mA ±50 mA 3
DC Supply Current, per Output Pin ICC -50 50 mA ±50 mA 3
DC Ground Current, per Output Pin IGND -100 100 mA ±100 mA 3
Storage Temperature Range TSTG -65 150 °C 3
Lead Temperature TL 260 °C 1 mm from case for 10 seconds 3
Junction Temperature Under Bias TJ 140 °C 3
Thermal Resistance, SOIC θJA 65.8 °C/W SOIC, JESD 51-7 3
Supply Voltage VCC 2 5 6 V 'AC 3
DC Input Voltage, Output Voltage VIN, VOUT 0 V 0 to VCC (Ref. to GND) 3
Operating Ambient Temperature Range TA -40 25 85 °C 3
Output Current - High IOH -24 mA 3
Output Current - Low IOL 24 mA 3
Minimum High Level Input Voltage VIH 2.1 1.5 V VCC = 3.0 V, VOUT = 0.1 V or VCC − 0.1 V 4
Minimum High Level Input Voltage VIH 3.15 2.25 V VCC = 4.5 V, VOUT = 0.1 V or VCC − 0.1 V 4
Minimum High Level Input Voltage VIH 3.85 2.75 V VCC = 5.5 V, VOUT = 0.1 V or VCC − 0.1 V 4
Maximum Low Level Input Voltage VIL 1.5 0.9 V VCC = 3.0 V, VOUT = 0.1 V or VCC − 0.1 V 4
Maximum Low Level Input Voltage VIL 2.25 1.35 V VCC = 4.5 V, VOUT = 0.1 V or VCC − 0.1 V 4
Maximum Low Level Input Voltage VIL 2.75 1.65 V VCC = 5.5 V, VOUT = 0.1 V or VCC − 0.1 V 4
Minimum High Level Output Voltage VOH 2.9 2.99 V VCC = 3.0 V, IOUT = -50 µA 4
Minimum High Level Output Voltage VOH 4.4 4.49 V VCC = 4.5 V, IOUT = -50 µA 4
Minimum High Level Output Voltage VOH 5.4 5.49 V VCC = 5.5 V, IOUT = -50 µA 4
Minimum High Level Output Voltage VOH 2.56 V TA = +25°C, VCC = 3.0 V, VIN = VIL or VIH, IOH = -12 mA 4
Minimum High Level Output Voltage VOH 3.86 V TA = +25°C, VCC = 4.5 V, VIN = VIL or VIH, IOH = -24 mA 4
Minimum High Level Output Voltage VOH 4.86 V TA = +25°C, VCC = 5.5 V, VIN = VIL or VIH, IOH = -24 mA 4
Minimum High Level Output Voltage VOH 2.46 V TA = -40°C to +85°C, VCC = 3.0 V, VIN = VIL or VIH, IOH = -12 mA 4
Minimum High Level Output Voltage VOH 3.76 V TA = -40°C to +85°C, VCC = 4.5 V, VIN = VIL or VIH, IOH = -24 mA 4
Minimum High Level Output Voltage VOH 4.76 V TA = -40°C to +85°C, VCC = 5.5 V, VIN = VIL or VIH, IOH = -24 mA 4
Maximum Low Level Output Voltage VOL 0.002 0.1 V VCC = 3.0 V, IOUT = 50 µA 4
Maximum Low Level Output Voltage VOL 0.001 0.1 V VCC = 4.5 V, IOUT = 50 µA 4
Maximum Low Level Output Voltage VOL 0.36 V TA = +25°C, VCC = 3.0 V, VIN = VIL or VIH, IOL = 12 mA 4
Maximum Low Level Output Voltage VOL 0.44 V TA = -40°C to +85°C, VCC = 3.0 V, VIN = VIL or VIH, IOL = 12 mA 4
Maximum Input Leakage Current IIN -0.1 0.1 µA TA = +25°C, VCC = 5.5 V, VI = VCC, GND 4
Maximum Input Leakage Current IIN -1 1 µA TA = -40°C to +85°C, VCC = 5.5 V, VI = VCC, GND 4
Maximum 3-State Current IOZ -0.5 0.5 µA TA = +25°C, VCC = 5.5 V, VI (OE) = VIL, VIH; VI = VCC, GND; VO = VCC, GND 4
Maximum 3-State Current IOZ -5 5 µA TA = -40°C to +85°C, VCC = 5.5 V, VI (OE) = VIL, VIH; VI = VCC, GND; VO = VCC, GND 4
Minimum Dynamic Output Current IOLD 75 mA TA = -40°C to +85°C, VCC = 5.5 V, VOLD = 1.65 V Max 4
Minimum Dynamic Output Current IOHD -75 mA TA = -40°C to +85°C, VCC = 5.5 V, VOHD = 3.85 V Min 4
Maximum Quiescent Supply Current ICC 8 µA TA = +25°C, VCC = 5.5 V, VIN = VCC or GND 4
Maximum Quiescent Supply Current ICC 80 µA TA = -40°C to +85°C, VCC = 5.5 V, VIN = VCC or GND 4
Propagation Delay Dn to On (LH) tPLH 2 11.5 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Propagation Delay Dn to On (HL) tPHL 2 11 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Propagation Delay LE to On (LH) tPLH 2 11 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Propagation Delay LE to On (HL) tPHL 2 10 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Output Enable Time tPZH 2 10 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Output Enable Time tPZL 2 9.5 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Output Disable Time tPHZ 2 12 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Output Disable Time tPLZ 2 9 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Setup Time, HIGH or LOW Dn to LE ts 3.5 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
Hold Time, HIGH or LOW Dn to LE th 2 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5
LE Pulse Width, HIGH tw 5 ns TA = -40°C to +85°C, VCC = 5.0 V, CL = 50 pF 5

CAD (KiCad official)

  • Symbol: MC74AC573DWR2G
  • Footprint: Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm
  • 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
  • 3D model files: mc74ac573dwr2g-etched.step / mc74ac573dwr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mc74ac573dwr2g.step / mc74ac573dwr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 1ff43863058fe491, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF