component
MC74AC02DR2G
Public Made by Adomby adom
onsemi Gates, SOIC-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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MC74AC02DR2G
onsemi · Gates · SOIC-14
MC74AC02DR2G from onsemi, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1Y | output | Gate 1 NOR output, sources/sinks 24 mA. |
| 2 | 1A | input | Gate 1 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 3 | 1B | input | Gate 1 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 4 | 2Y | output | Gate 2 NOR output, sources/sinks 24 mA. |
| 5 | 2A | input | Gate 2 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 6 | 2B | input | Gate 2 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 7 | GND | power_in | Ground (0 V reference). |
| 8 | 3A | input | Gate 3 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 9 | 3B | input | Gate 3 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 10 | 3Y | output | Gate 3 NOR output, sources/sinks 24 mA. |
| 11 | 4A | input | Gate 4 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 12 | 4B | input | Gate 4 input; 'AC02 CMOS levels, 'ACT02 TTL-compatible levels. |
| 13 | 4Y | output | Gate 4 NOR output, sources/sinks 24 mA. |
| 14 | VCC | power_in | Supply voltage; 2.0 to 6.0 V for 'AC, 4.5 to 5.5 V for 'ACT (abs max -0.5 to +6.5 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-14 |
| Category | Logic ICs |
| Pins | 14 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Supply Voltage | VCC | -0.5 | 6.5 | V | 2 | ||
| DC Input Voltage | VI | -0.5 | 6.5 | V | -0.5 ≤ VI ≤ VCC + 0.5 V; max shown assumes VCC = 6.0 V recommended maximum is not stated, so see note | 2 | |
| DC Input Diode Current | IIK | -20 | 20 | mA | ±20 mA | 2 | |
| DC Output Diode Current | IOK | -50 | 50 | mA | ±50 mA | 2 | |
| DC Output Sink/Source Current | IO | -50 | 50 | mA | ±50 mA | 2 | |
| DC Supply Current per Output Pin | ICC | -50 | 50 | mA | ±50 mA | 2 | |
| DC Ground Current per Output Pin | IGND | -50 | 50 | mA | ±50 mA | 2 | |
| Storage Temperature Range | TSTG | -65 | 150 | °C | 2 | ||
| Lead temperature | TL | 260 | °C | 1 mm from case for 10 seconds | 2 | ||
| Junction temperature under bias | TJ | 150 | °C | 2 | |||
| Thermal Resistance | θJA | 116 | °C/W | SOIC-14 NB, JESD51-7 | 2 | ||
| Power Dissipation in Still Air | PD | 1077 | mW | SOIC-14 NB, 25 °C | 2 | ||
| ESD Withstand Voltage HBM | VESD | 2000 | V | Human Body Model, > 2000 | 2 | ||
| ESD Withstand Voltage CDM | VESD | 1000 | V | Charged Device Model, > 1000 | 2 | ||
| Latch-Up Performance | ILatch-Up | -100 | 100 | mA | Above VCC and below GND at 85 °C | 2 | |
| Supply Voltage 'AC | VCC | 2 | 5 | 6 | V | 'AC | 2 |
| DC Input/Output Voltage | Vin, Vout | 0 | 6 | V | Ref. to GND; 0 to VCC | 2 | |
| Operating Ambient Temperature | TA | -40 | 25 | 85 | °C | 2 | |
| Output Current High | IOH | -24 | mA | 2 | |||
| Output Current Low | IOL | 24 | mA | 2 | |||
| Input Rise and Fall Time 'AC | tr, tf | 150 | ns/V | VCC @ 3.0 V, Vin 30% to 70% VCC | 2 | ||
| Input Rise and Fall Time 'AC | tr, tf | 40 | ns/V | VCC @ 4.5 V, Vin 30% to 70% VCC | 2 | ||
| Input Rise and Fall Time 'AC | tr, tf | 25 | ns/V | VCC @ 5.5 V, Vin 30% to 70% VCC | 2 | ||
| Minimum High Level Input Voltage | VIH | 2.1 | 1.5 | V | VCC = 3.0 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Minimum High Level Input Voltage | VIH | 3.15 | 2.25 | V | VCC = 4.5 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Minimum High Level Input Voltage | VIH | 3.85 | 2.75 | V | VCC = 5.5 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Maximum Low Level Input Voltage | VIL | 1.5 | 0.9 | V | VCC = 3.0 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Maximum Low Level Input Voltage | VIL | 2.25 | 1.35 | V | VCC = 4.5 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Maximum Low Level Input Voltage | VIL | 2.75 | 1.65 | V | VCC = 5.5 V, VOUT = 0.1 V or VCC − 0.1 V | 3 | |
| Minimum High Level Output Voltage | VOH | 2.9 | 2.99 | V | VCC = 3.0 V, IOUT = −50 µA | 3 | |
| Minimum High Level Output Voltage | VOH | 4.4 | 4.49 | V | VCC = 4.5 V, IOUT = −50 µA | 3 | |
| Minimum High Level Output Voltage | VOH | 5.4 | 5.49 | V | VCC = 5.5 V, IOUT = −50 µA | 3 | |
| Minimum High Level Output Voltage | VOH | 2.46 | 2.56 | V | VCC = 3.0 V, VIN = VIL or VIH, IOH = −12 mA | 3 | |
| Minimum High Level Output Voltage | VOH | 3.76 | 3.86 | V | VCC = 4.5 V, VIN = VIL or VIH, IOH = −24 mA | 3 | |
| Minimum High Level Output Voltage | VOH | 4.76 | 4.86 | V | VCC = 5.5 V, VIN = VIL or VIH, IOH = −24 mA | 3 | |
| Maximum Low Level Output Voltage | VOL | 0.002 | 0.1 | V | VCC = 3.0 V, IOUT = 50 µA | 3 | |
| Maximum Low Level Output Voltage | VOL | 0.001 | 0.1 | V | VCC = 4.5 V, IOUT = 50 µA | 3 | |
| Maximum Low Level Output Voltage | VOL | 0.36 | 0.44 | V | VCC = 3.0 V, VIN = VIL or VIH, IOL = 12 mA | 3 | |
| Maximum Input Leakage Current | IIN | -1 | 1 | µA | VCC = 5.5 V, VI = VCC, GND, TA = −40 to +85 °C (±0.1 at 25 °C) | 3 | |
| Minimum Dynamic Output Current | IOLD | 75 | mA | VCC = 5.5 V, VOLD = 1.65 V Max | 3 | ||
| Minimum Dynamic Output Current | IOHD | -75 | mA | VCC = 5.5 V, VOHD = 3.85 V Min | 3 | ||
| Maximum Quiescent Supply Current | ICC | 40 | µA | VCC = 5.5 V, VIN = VCC or GND, TA = −40 to +85 °C (4.0 at 25 °C) | 3 | ||
| Propagation Delay tPLH | tPLH | 1 | 5 | 8 | ns | VCC = 3.3 V, CL = 50 pF, TA = −40 to +85 °C (25 °C: 1.5/5.0/7.5) | 3 |
| Propagation Delay tPLH | tPLH | 1 | 4 | 6.5 | ns | VCC = 5.0 V, CL = 50 pF, TA = −40 to +85 °C (25 °C: 1.5/4.0/6.0) | 3 |
| Propagation Delay tPHL | tPHL | 1 | 5 | 8 | ns | VCC = 3.3 V, CL = 50 pF, TA = −40 to +85 °C (25 °C: 1.5/5.0/7.5) | 3 |
| Propagation Delay tPHL | tPHL | 1 | 4.5 | 7 | ns | VCC = 5.0 V, CL = 50 pF, TA = −40 to +85 °C (25 °C: 1.5/4.5/6.5) | 3 |
| Input Capacitance | CIN | 4.5 | pF | VCC = 5.0 V | 4 | ||
| Power Dissipation Capacitance | CPD | 30 | pF | VCC = 5.0 V | 4 |
CAD (KiCad official)
- Symbol:
MC74AC02DR2G - Footprint:
Package_SO:SOIC-14_3.9x8.7mm_P1.27mm - 3D model: SOIC-14 (KiCad packages3D, STEP)
- 3D model files:
mc74ac02dr2g-etched.step/mc74ac02dr2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mc74ac02dr2g.step/mc74ac02dr2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
58c18d45011c895d, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).