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MC33FS6510LAE

NXP Semicon · Power Management Specialized - PMIC · LQFP-48(7x7)

MC33FS6510LAE from NXP Semicon, in a LQFP-48(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VSUP1 power_in Power supply of the device; an external reverse battery protection diode in series is mandatory.
2 VSUP2 power_in Second power supply protected by the external reverse battery protection diode used for VSUP1; VSUP1 and VSUP2 must be connected together externally.
3 VSENSE input Battery voltage sense, must be connected before the reverse battery protection diode with an external series resistor; rated -14 V to 40 V DC.
4 VSUP3 power_in Third power supply dedicated to the device supply, protected by the external reverse battery protection diode and connected between the diode and the input PI filter.
5 LIN bidirectional LIN single-wire bus transmitter and receiver; LIN and FS1B are exclusive, and this LIN part does not use pin 5 as FS1B.
6 GND_COM power_in Dedicated ground for the physical layers (CAN and LIN).
7 CAN_5V power_out Output voltage for the embedded CAN FD interface; DC voltage rated -0.3 V to 8 V.
8 CANH bidirectional CAN output high; must be left open if the CAN function is not used. CAN bus voltage rated -27 V to 40 V.
9 CANL bidirectional CAN output low; must be left open if the CAN function is not used. CAN bus voltage rated -27 V to 40 V.
10 IO_4 bidirectional Digital input (load dump proof) with selectable wake-up or logic-level low-side NMOS gate driver output controlled by SPI; DC rating -0.3 V to 40 V with external series resistor.
11 IO_5/VKAM bidirectional Digital input with wake-up capability or analog supply output providing keep-alive memory supply in low-power mode; IO_5 rated -0.3 V to 20 V and VKAM rated -0.3 V to 8 V.
12 IO_0 input Analog or digital input (load dump proof) with selectable wake-up capability; DC rating -0.3 V to 40 V with external series resistor.
13 FCRBM input Feedback core resistor bridge monitoring input for the midpoint of a redundant VCORE resistor bridge; if unused it must be connected directly to FB_CORE, rated -0.3 V to 8 V.
14 FS0B output Primary fail-safe output, active low, asserted at start-up and on fault detection; open drain, rated -0.3 V to 40 V with external series resistor.
15 DEBUG input Debug mode entry input; DC rating -0.3 V to 40 V.
16 AGND power_in Analog ground connection.
17 MUX_OUT output Multiplexed analog output to be connected to an MCU ADC, with the measured parameter selected through SPI; rated -0.3 V to 8 V.
18 IO_2 input Logic-level digital input with selectable wake-up, used to monitor FCCU error signals from the MCU; rated -0.3 V to 8 V.
19 IO_3 input Logic-level digital input with selectable wake-up, used to monitor FCCU error signals from the MCU; rated -0.3 V to 8 V.
20 TXD input CAN transceiver input from the MCU controlling the CAN bus state, with internal pull-up to VDDIO; leave open if CAN is not used.
21 RXD output CAN receiver output reporting the CAN bus state to the MCU; leave open if CAN is not used.
22 TXDL input LIN transceiver input from the MCU controlling the LIN bus state, with internal pull-up to VDDIO; leave open if LIN is not used.
23 RXDL output LIN receiver output reporting the LIN bus state to the MCU; leave open if LIN is not used.
24 RSTB output Active-low reset output asserted when the safety block reports a failure to reset the MCU; open drain, rated -0.3 V to 8 V and requires external pull-up to VDDIO.
25 MISO output SPI bus primary input / secondary output; output buffer supplied from VDDIO.
26 MOSI input SPI bus primary output / secondary input; rated -0.3 V to 8 V.
27 SCLK input SPI serial clock input; rated -0.3 V to 8 V.
28 NCS input SPI not chip select input, active low; rated -0.3 V to 8 V.
29 INTB output Interrupt output generating a low pulse of configurable duration on an interrupt condition; internal pull-up to VDDIO.
30 VDDIO power_in Input voltage for the MISO output buffer, allowing voltage compatibility with MCU I/Os; rated -0.3 V to 8 V.
31 SELECT input Hardware selection pin for VCCA and VAUX output voltages via an external resistor to GND or VPRE; rated -0.3 V to 8 V.
32 FB_CORE input VCORE voltage feedback, input of the error amplifier; rated -0.3 V to 2.5 V.
33 COMP_CORE output Compensation network output of the VCORE error amplifier; rated -0.3 V to 2.5 V.
34 VCORE_SNS input VCORE output voltage sense input; rated 0.0 V to 8 V.
35 SW_CORE output VCORE output switching point for the FS6500 series; rated -1.0 V to 8 V.
36 BOOT_CORE bidirectional Bootstrap capacitor connection for the VCORE internal NMOS gate drive; rated 0.0 V to 15 V.
37 VPRE input VPRE input voltage sense; rated -0.3 V to 8 V.
38 VAUX power_out VAUX output voltage (5.0 V or 3.3 V selectable) via an external PNP ballast transistor collector connection; rated -2.0 V to 40 V.
39 VAUX_B output VAUX voltage regulator drive; base connection of the external PNP ballast transistor; rated -0.3 V to 40 V.
40 VAUX_E output VAUX voltage regulator drive; emitter connection of the external PNP ballast transistor; rated -0.3 V to 40 V.
41 VCCA_E output VCCA voltage regulator drive; emitter connection of the external PNP ballast transistor; rated -0.3 V to 8 V.
42 VCCA_B output VCCA voltage regulator drive; base connection of the external PNP ballast transistor; rated -0.3 V to 8 V.
43 VCCA power_out VCCA output voltage (5.0 V or 3.3 V selectable) via the collector connection of an external PNP ballast transistor; rated -0.3 V to 8 V.
44 GATE_LS output Low-side MOSFET gate drive for non-inverting buck-boost configuration; rated -0.3 V to 8 V.
45 DGND power_in Digital ground connection.
46 BOOT_PRE bidirectional Bootstrap capacitor connection for the VPRE internal NMOS gate drive; rated -1.0 V to 50 V.
47 SW_PRE2 output Second pre-regulator output switching point; rated -1.0 V to 40 V.
48 SW_PRE1 output First pre-regulator output switching point; rated -1.0 V to 40 V.

Key specifications

Parameter Value
Manufacturer NXP Semicon
Package LQFP-48(7x7)
Category Power Management ICs
Pins 48

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply current in normal mode ISUP123 15 mA 17
Power supply current for VSUP3 in normal mode ISUP3 3.5 5 mA 17
Power supply current in LPOFF (VSUP = 18 V at TA = 80 °C) ISUP_LPOFF2 42 60 µA VSUP = 18 V at TA = 80 °C 17
Power supply undervoltage warning VSNS_UV 7 8 9 V 17
Power supply undervoltage lockout (power up) VSUP_UV_7 7 8 V 17
Power supply undervoltage lockout (falling, boost configuration) VSUP_UV_L 2.7 V falling, boost configuration 17
Power supply undervoltage lockout (falling, buck configuration) VSUP_UV_L_B 4.5 V falling, buck configuration 17
Power supply undervoltage lockout in LPOFF VSUP_UV_LPOFF 4.5 V 17
IPFF input voltage detection VSUP_IPFF 21 27 V 17
VPRE output voltage (buck mode) VPRE 6.25 6.75 V Buck mode (VSUP > VSUP_UV_7) 17
VPRE output voltage (boost mode) VPRE 6 7 V Boost mode (VSUP ≥ 2.7 V) 17
VPRE maximum output current capability IPRE 2 A Buck or boost with VSUP > VSUP_UV_7 17
SW_PRE output current limitation in buck-boost mode IPRE_LIM1 3.5 A buck-boost mode (VSUP ≤ 28 V) 17
SW_PRE output current limitation in buck mode IPRE_LIM2 2.5 A buck mode (VSUP ≤ 28 V) 17
SW_PRE overcurrent detection threshold in buck mode IPRE_OC 4.5 A buck mode (VSUP ≤ 28 V) 17
VPRE undervoltage detection threshold (falling) VPRE_UV 5.5 6 V 17
VPRE shut-off threshold (falling, buck and buck/boost) VPRE_UV_4P3 4.1 4.5 V falling, buck and buck/boost 17
VPRE pass transistor on resistance RDSON_PRE 200 mΩ VSUP ≤ 28 V 18
VPRE thermal shutdown threshold TSD_PRE 160 °C 18
VCORE feedback input voltage VCORE_FB 0.784 0.8 0.816 V 18
VCORE internal pull-down current IPD_CORE 5 12 25 mA active when VCORE is enabled 18
VCORE output current capability in normal mode ICORE 1.5 A FS651x 18
VCORE output current limitation ICORE_LIM 1.8 2.8 A FS651x 18
VCORE pass transistor on resistance RDSON_CORE 200 mΩ 18
VCORE transient load regulation, 3.3 V range FS65_LORVCORE_3.3 -100 100 mV COUT_VCORE = 40 µF, ICORE = 10 mA to 1.5 A, dICORE/dt ≤ 2.0 A/µs 19
VCORE thermal shutdown threshold TSD_CORE 160 °C 19
VCCA output voltage VCCA 4.95 5 5.05 V 5.0 V configuration with internal ballast at 100 mA 19
VCCA output voltage VCCA 4.9 5 5.1 V 5.0 V configuration with external ballast at 200 mA 19
VCCA output voltage VCCA 4.85 5 5.15 V 5.0 V configuration with external ballast at 300 mA 19
VCCA output voltage VCCA 3.267 3.3 3.333 V 3.3 V configuration with internal ballast at 100 mA 19
VCCA output voltage VCCA 3.234 3.3 3.366 V 3.3 V configuration with external ballast at 200 mA 19
VCCA output voltage VCCA 3.201 3.3 3.399 V 3.3 V configuration with external ballast at 300 mA 19
VCCA output current (int. MOSFET) ICCA_IN 100 mA int. MOSFET 19
VCCA output current (external PNP) ICCA_OUT 300 mA external PNP 19
VCCA output current limitation (int. MOSFET) ICCA_LIM_INT 100 675 mA int. MOSFET 19
VCCA output current limitation (external PNP) ICCA_LIM_OUT 300 675 mA external PNP 19
VCCA output voltage foldback threshold VCCA_LIM_FB 0.6 1.2 V 19
VCCA thermal shutdown threshold TSDCCA 160 °C int. MOSFET only 19
VAUX output voltage (5.0 V configuration) VAUX_5 4.85 5 5.15 V 5.0 V configuration 19
VAUX output voltage (3.3 V configuration) VAUX_33 3.2 3.3 3.4 V 3.3 V configuration 19
VAUX output current IAUX_OUT 400 mA 19
VAUX output current limitation IAUX_LIM 400 800 mA 20
VCAN output voltage VCAN 4.8 5 5.2 V VSUP > 6.0 V in buck mode; VSUP > VSUP_UV_L in boost mode 20
VCAN output current ICAN_OUT 100 mA 20
VCAN undervoltage detection threshold VCAN_UV 4.25 4.8 V 20
VCAN overvoltage detection threshold (rising) VCAN_OV 5.2 5.85 V 20
VKAM output voltage VKAM 3 3.5 4 V 20
VKAM output current IKAM_OUT 3 mA 20
VKAM output current limitation IKAM_LIM 4 10 mA 20
VPRE overvoltage detection threshold VPRE_OV 7.2 8 V 20
VCORE FB undervoltage detection threshold VCORE_FB_UV 0.67 0.773 V 20
Reset low output level VRSTB_OL 0.5 V I_RSTB = 2.0 mA 21
Ambient temperature TA -40 125 °C 16
Junction temperature TJ -40 150 °C 16
Storage temperature TSTG -55 150 °C 16
Thermal resistance junction to ambient RθJA 30 °C/W Per JEDEC JESD51-6 with board (JESD51-7) horizontal 16
Thermal resistance junction to case top RθJCTOP 23.8 °C/W cold plate method (MIL SPEC - 883 Method 1012.1) 16
Thermal resistance junction to case bottom RθJCBOTTOM 0.9 °C/W based on simulation without any interface resistance 16

CAD (KiCad official)

  • Symbol: MC33FS6510LAE
  • Footprint: Package_QFP:LQFP-48_7x7mm_P0.5mm
  • 3D model: LQFP-48(7x7) (KiCad packages3D, STEP)
  • 3D model files: mc33fs6510lae-etched.step / mc33fs6510lae-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mc33fs6510lae.step / mc33fs6510lae.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NXP Semicon datasheet (161 pp, sha256 39f5c318b818b984, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF