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Contents

README

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MC1413N

HGSEMI · Darlington Transistor Arrays · DIP-16

MC1413N from HGSEMI, in a DIP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1B input Base input of Darlington channel 1 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
2 2B input Base input of Darlington channel 2 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
3 3B input Base input of Darlington channel 3 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
4 4B input Base input of Darlington channel 4 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
5 5B input Base input of Darlington channel 5 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
6 6B input Base input of Darlington channel 6 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
7 7B input Base input of Darlington channel 7 with a 2.7k series base resistor, TTL/CMOS compatible at 5V; input voltage range -0.3V to 30V.
8 GND power_in Common emitter of all seven Darlington transistors (ground); pin 8 is not labeled in the datasheet figure, assignment inferred from the common-emitter description.
9 COM passive Common cathode of the clamp diodes for inductive loads, connected to the load supply.
10 7C output Open-collector output of channel 7; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
11 6C output Open-collector output of channel 6; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
12 5C output Open-collector output of channel 5; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
13 4C output Open-collector output of channel 4; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
14 3C output Open-collector output of channel 3; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
15 2C output Open-collector output of channel 2; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).
16 1C output Open-collector output of channel 1; 500mA continuous collector current, 50V off-state capability (55V absolute maximum output voltage).

Key specifications

Parameter Value
Manufacturer HGSEMI
Package DIP-16
Category Transistors/Thyristors
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage -0.3 30 V 2
Output voltage 55 V 2
Emitter-to-base maximum voltage 6 V 2
Collector continuous output current (single channel) 500 mA 2
Base continuous current 25 mA 2
Storage temperature -65 150 ℃ 2
Junction temperature range -40 150 ℃ 2
Lead temperature (soldering) 260 ℃ soldering 10 s 2
Operating temperature range (MC1413 variant) -20 85 ℃ MC1413 (not MC1413B) 2
Output leakage current (ICEX) ICEX 20 μA TA = 25°C, VCE = 50V (Fig 1) 3
Output leakage current (ICEX) ICEX 100 μA TA = 85°C, VCE = 50V (Fig 1) 3
Collector-emitter saturation voltage VCE(Sat) 1.3 1.6 V IC = 350mA, IB = 500μA (Fig 3) 3
Collector-emitter saturation voltage VCE(Sat) 1.1 1.3 V IC = 200mA, IB = 350μA (Fig 3) 3
Collector-emitter saturation voltage VCE(Sat) 0.9 1.1 V IC = 100mA, IB = 250μA (Fig 3) 3
On-state input current II(ON) 0.93 1.35 mA VI = 3.85V (Fig 4) 3
Off-state input current II(OFF) 50 100 μA TA = +25°C, IC = 500μA (Fig 5) 3
Off-state input current II(OFF) 25 50 μA TA = +85°C, IC = 500μA (Fig 5) 3
Input capacitance CI 15 30 pF 3
Turn-on delay time tPLH 1 μs 0.5 VI to 0.5 VO 3
Turn-off delay time tPHL 1 μs 0.5 VI to 0.5 VO 3
Clamp diode leakage current (IR) IR 5 10 μA TA = 25°C, VR = 50V (Fig 7) 3
Clamp diode leakage current (IR) IR 10 50 μA TA = 85°C, VR = 50V (Fig 7) 3
Clamp diode forward voltage VF 1.7 2 V IF = 350mA (Fig 8) 3
Input voltage (on) VI(ON) 2.4 V VCE = 2.0V, IC = 200mA (Fig 6) 3
Input voltage (on) VI(ON) 2.7 V VCE = 2.0V, IC = 250mA (Fig 6) 3
Input voltage (on) VI(ON) 3 V VCE = 2.0V, IC = 300mA (Fig 6) 3

CAD (KiCad official)

  • Symbol: MC1413N
  • Footprint: Package_DIP:DIP-16_W7.62mm
  • 3D model: DIP-16 (KiCad packages3D, STEP)
  • 3D model files: mc1413n-etched.step / mc1413n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mc1413n.step / mc1413n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HGSEMI datasheet (9 pp, sha256 0615f36aefef0bd1, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF