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MC1413BN

HGSEMI · Darlington Transistor Arrays · DIP-16

MC1413BN from HGSEMI, in a DIP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	1B	input	Channel 1 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
2	2B	input	Channel 2 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
3	3B	input	Channel 3 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
4	4B	input	Channel 4 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
5	5B	input	Channel 5 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
6	6B	input	Channel 6 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
7	7B	input	Channel 7 Darlington base input with 2.7k series resistor, TTL/CMOS compatible at 5V; input voltage -0.3V to 30V.
8	GND	power_in	Common emitter of all seven Darlington units, connected to ground (pin number not labeled in the datasheet diagram).
9	COM	passive	Common cathode of the clamp diodes for inductive loads, connected to the load supply; diode forward drop 1.7V typ at IF=350mA.
10	7C	output	Channel 7 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
11	6C	output	Channel 6 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
12	5C	output	Channel 5 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
13	4C	output	Channel 4 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
14	3C	output	Channel 3 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
15	2C	output	Channel 2 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).
16	1C	output	Channel 1 open-collector output sinking up to 500mA continuous and withstanding 50V off-state (55V max).

Key specifications

Parameter	Value
Manufacturer	HGSEMI
Package	DIP-16
Category	Transistors/Thyristors
Pins	16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
输入电压 (input voltage)		-0.3		30	V		2
输出电压 (output voltage)				55	V		2
射极到基极的最高耐压 (emitter-base breakdown voltage)				6	V		2
集电极持续工作电流 (collector continuous current)				500	mA		2
基极持续工作电流 (base continuous current)				25	mA		2
存储温度 (storage temperature)		-65		150	°C		2
结温度范围 (junction temperature range)		-40		150	°C		2
引脚温度 (lead soldering temperature)				260	°C	焊接10s	2
工作温度范围 MC1413B (operating temperature range)		-40		85	°C	MC1413B	2
输出管漏电流 (output leakage current)	ICEX			20	μA	TA = 25°C, VCE = 50V	3
输出管漏电流 (output leakage current)	ICEX			100	μA	TA = 85°C, VCE = 50V	3
CE饱和压降 (collector-emitter saturation voltage)	VCE(Sat)		1.3	1.6	V	IC = 350mA, IB = 500μA	3
CE饱和压降 (collector-emitter saturation voltage)	VCE(Sat)		1.1	1.3	V	IC = 200mA, IB = 350μA	3
CE饱和压降 (collector-emitter saturation voltage)	VCE(Sat)		0.9	1.1	V	IC = 100mA, IB = 250μA	3
开态输入电流 (on-state input current)	II(ON)		0.93	1.35	mA	VI = 3.85V	3
关态输入电流 (off-state input current)	II(OFF)		50	100	μA	IC = 500μA, TA = +25°C	3
关态输入电流 (off-state input current)	II(OFF)		25	50	μA	IC = 500μA, TA = +85°C	3
输入电压 (input voltage for on state)	VI(ON)			2.4	V	VCE = 2.0V, IC = 200mA	3
输入电压 (input voltage for on state)	VI(ON)			2.7	V	VCE = 2.0V, IC = 250mA	3
输入电压 (input voltage for on state)	VI(ON)			3	V	VCE = 2.0V, IC = 300mA	3
输入电容 (input capacitance)	CI		15	30	pF		3
导通延迟时间 (turn-on delay time)	tPLH			1	μs	0.5 VI to 0.5 VO	3
关断延迟时间 (turn-off delay time)	tPHL			1	μs	0.5 VI to 0.5 VO	3
嵌位二极管漏电流 (clamp diode leakage current)	IR		5	10	μA	VR = 50V, TA = 25°C	3
嵌位二极管漏电流 (clamp diode leakage current)	IR		10	50	μA	VR = 50V, TA = 85°C	3
嵌位二极管正向压降 (clamp diode forward voltage)	VF		1.7	2	V	IF = 350mA	3

CAD (KiCad official)

Symbol: MC1413BN
Footprint: Package_DIP:DIP-16_W7.62mm
3D model: DIP-16 (KiCad packages3D, STEP)
3D model files: mc1413bn-etched.step / mc1413bn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mc1413bn.step / mc1413bn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HGSEMI datasheet (9 pp, sha256 3c371449f06bd050, retrieved 2026-10-14, tier: lcsc)
Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF