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MBT3946DW1T1G-HXY

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HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MBT3946DW1T1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-363

MBT3946DW1T1G-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (pin 1, marked with a dot on the package); VEBO limit is 5 V for the NPN and -5 V for the PNP.
2 B1 passive Base of transistor 1; emitter-base voltage is limited to 5 V in magnitude.
3 C2 passive Collector of transistor 2; collector current is limited to 200 mA in magnitude.
4 E2 passive Emitter of transistor 2; emitter-base voltage is limited to 5 V in magnitude.
5 B2 passive Base of transistor 2; emitter-base voltage is limited to 5 V in magnitude.
6 C1 passive Collector of transistor 1; collector current is limited to 200 mA, with VCEO of 40 V in magnitude.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage (NPN) V(BR)CBO 60 V IC=10µA, IE=0 1
Collector-emitter breakdown voltage (NPN) V(BR)CEO 40 V IC=1mA, IB=0 1
Emitter-base breakdown voltage (NPN) V(BR)EBO 5 V IE=10µA, IC=0 1
Collector cut-off current (NPN) ICEO 50 nA VCE=30V, IB=0 1
Emitter cut-off current (NPN) IEBO 50 nA VEB=5V, IC=0 1
DC current gain (1) (NPN) hFE(1) 40 VCE=1V, IC=100μA 1
DC current gain (2) (NPN) hFE(2) 70 VCE=1V, IC=1mA 1
DC current gain (3) (NPN) hFE(3) 100 300 VCE=1V, IC=10mA 1
DC current gain (4) (NPN) hFE(4) 60 VCE=1V, IC=50mA 1
DC current gain (5) (NPN) hFE(5) 30 VCE=1V, IC=100mA 1
Collector-emitter saturation voltage (NPN) VCE(sat) 0.2 V IC=10mA, IB=1mA 1
Collector-emitter saturation voltage (NPN) VCE(sat) 0.3 V IC=50mA, IB=5mA 1
Base-emitter saturation voltage (NPN) VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 1
Base-emitter saturation voltage (NPN) VBE(sat) 0.95 V IC=50mA, IB=5mA 1
Transition frequency (NPN) fT 300 MHz VCE=20V, IC=10mA, f=100MHz 1
Collector output capacitance (NPN) Cob 4 pF VCB=5V, IE=0, f=1MHz 1
Noise figure (NPN) NF 5 dB VCE=5V, Ic=0.1mA, f=1kHz, Rg=1KΩ 1
Delay time (NPN) td 35 ns VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA 1
Rise time (NPN) tr 35 ns 1
Storage time (NPN) ts 225 ns VCC=3V, IC=10mA, IB1=IB2=1mA 1
Fall time (NPN) tf 75 ns 1
Collector-base breakdown voltage (PNP) V(BR)CBO* -40 V IC=-10µA, IE=0 2
Collector-emitter breakdown voltage (PNP) V(BR)CEO* -40 V IC=-1mA, IB=0 2
Emitter-base breakdown voltage (PNP) V(BR)EBO* -5 V IE=-10µA, IC=0 2
Collector cut-off current (PNP) ICEX* -50 nA VCE=-30V, VEB(off)=-3V 2
Base cut-off current (PNP) IEBO -50 nA VEB=-5V, IE=0 2
DC current gain (1) (PNP) hFE(1)* 60 VCE=-1V, IC=-100μA 2
DC current gain (2) (PNP) hFE(2)* 80 VCE=-1V, IC=-1mA 2
DC current gain (3) (PNP) hFE(3)* 100 300 VCE=-1V, IC=-10mA 2
DC current gain (4) (PNP) hFE(4)* 60 VCE=-1V, IC=-50mA 2
DC current gain (5) (PNP) hFE(5)* 30 VCE=-1V, IC=-100mA 2
Collector-emitter saturation voltage (PNP) VCE(sat)* -0.25 V IC=-10mA, IB=-1mA 2
Collector-emitter saturation voltage (PNP) VCE(sat)* -0.4 V IC=-50mA, IB=-5mA 2
Base-emitter saturation voltage (PNP) VBE(sat)* -0.65 -0.85 V IC=-10mA, IB=-1mA 2
Base-emitter saturation voltage (PNP) VBE(sat)* -0.95 V IC=-50mA, IB=-5mA 2
Transition frequency (PNP) fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 2
Collector output capacitance (PNP) Cob 4.5 pF VCB=-5V, IE=0, f=1MHz 2
Noise figure (PNP) NF 4 dB VCE=-5V, Ic=-0.1mA, f=1kHz, Rg=1KΩ 2
Delay time (PNP) td 35 ns VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA 2
Rise time (PNP) tr 35 ns 2
Storage time (PNP) ts 225 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2
Fall time (PNP) tf 75 ns 2
Collector-base voltage (NPN, absolute maximum) VCBO 60 V 1
Collector-emitter voltage (NPN, absolute maximum) VCEO 40 V 1
Emitter-base voltage (NPN, absolute maximum) VEBO 5 V 1
Collector current (NPN, absolute maximum) IC 200 mA 1
Collector power dissipation (NPN, absolute maximum) PC 200 mW 1
Thermal resistance junction to ambient (NPN) RΘJA 625 °C/W 1
Operation junction and storage temperature range (NPN) TJ,Tstg -55 150 °C 1
Collector-base voltage (PNP, absolute maximum) VCBO -40 V 2
Collector-emitter voltage (PNP, absolute maximum) VCEO -40 V 2
Emitter-base voltage (PNP, absolute maximum) VEBO -5 V 2
Collector current (PNP, absolute maximum) IC -200 mA 2
Collector power dissipation (PNP, absolute maximum) PC 200 mW 2
Thermal resistance junction to ambient (PNP) RΘJA 625 °C/W 2
Operation junction and storage temperature range (PNP) TJ,Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: MBT3946DW1T1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mbt3946dw1t1g-hxy-etched.step / mbt3946dw1t1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbt3946dw1t1g-hxy.step / mbt3946dw1t1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 abc5c1d44094c418, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF