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MBT2222ADW1T1G

Public Made by Adom

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onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MBT2222ADW1T1G

onsemi · Bipolar (BJT) · SOT-363

MBT2222ADW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of transistor Q2 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.
2 BASE 2 passive Base of transistor Q2 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.
3 COLLECTOR 1 passive Collector of transistor Q1 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.
4 E1 passive Emitter of transistor Q1 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.
5 BASE 1 passive Base of transistor Q1 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.
6 COLLECTOR 2 passive Collector of transistor Q2 (dual NPN general-purpose transistor); datasheet maximum ratings for the device are VCEO 40 Vdc, VCBO 75 Vdc, VEBO 6.0 Vdc and IC 600 mAdc continuous.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 40 Vdc 1
Collector-Base Voltage VCBO 75 Vdc 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 600 mAdc 1
Total Package Dissipation PD 150 mW TA = 25°C (Note 1) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RJA 833 °C/W Note 1: FR4 glass epoxy PCB, minimum recommended footprint 1
Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 75 Vdc IC = 10 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICEX 10 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
Collector Cutoff Current ICBO 0.01 Adc VCB = 60 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 Adc VCB = 60 Vdc, IE = 0, TA = 125°C 2
Emitter Cutoff Current IEBO 100 nAdc VEB = 3.0 Vdc, IC = 0 2
Base Cutoff Current IBL 20 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
DC Current Gain hFE 35 IC = 0.1 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 50 IC = 1.0 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 75 IC = 10 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 100 300 IC = 150 mAdc, VCE = 10 Vdc (Note 2) 2
DC Current Gain hFE 40 IC = 500 mAdc, VCE = 10 Vdc (Note 2) 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 150 mAdc, IB = 15 mAdc (Note 2) 2
Collector-Emitter Saturation Voltage VCE(sat) 1 Vdc IC = 500 mAdc, IB = 50 mAdc (Note 2) 2
Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 Vdc IC = 150 mAdc, IB = 15 mAdc (Note 2) 2
Base-Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc (Note 2) 2
Current-Gain - Bandwidth Product fT 300 MHz IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz (Note 3) 2
Output Capacitance Cobo 8 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 25 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 2 8 k IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Input Impedance hie 0.25 1.25 k IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 8 X 10-4 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 4 X 10-4 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small-Signal Current Gain hfe 50 300 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small-Signal Current Gain hfe 75 375 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 5 35 mhos IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 25 200 mhos IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Collector Base Time Constant rb, Cc 150 ps IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz 2
Noise Figure NF 4 dB IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz 2
Delay Time td 10 ns VCC = 30 Vdc, VBE(off) = -0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 2
Rise Time tr 25 ns 2
Storage Time ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 2
Fall Time tf 60 ns 2

CAD (KiCad official)

  • Symbol: MBT2222ADW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mbt2222adw1t1g-etched.step / mbt2222adw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbt2222adw1t1g.step / mbt2222adw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 93c227af15f1cfbd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF