component
MBRS1100T3G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SMB(DO-214AA). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
MBRS1100T3G
onsemi · Schottky Barrier Diodes (SBD) · SMB(DO-214AA)
MBRS1100T3G from onsemi, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMB(DO-214AA) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Junction Temperature | TJ | -65 | 175 | °C | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.75 | V | iF = 1.0 A, TJ = 25°C; pulse test (Note 2) | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 0.5 | mA | Rated dc Voltage, TJ = 25°C (Note 2) | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 5 | mA | Rated dc Voltage, TJ = 100°C (Note 2) | 2 | ||
| Peak Repetitive Reverse Voltage (MBRS1100T3) | VRRM | 100 | V | 2 | |||
| Working Peak Reverse Voltage (MBRS1100T3) | VRWM | 100 | V | 2 | |||
| DC Blocking Voltage (MBRS1100T3) | VR | 100 | V | 2 | |||
| Average Rectified Forward Current | IF(AV) | 1 | A | TL = 163°C | 2 | ||
| Average Rectified Forward Current | IF(AV) | 2 | A | TL = 148°C | 2 | ||
| Non-Repetitive Peak Surge Current | IFSM | 50 | A | Surge applied at rated load conditions, halfwave, single phase, 60 Hz | 2 | ||
| Voltage Rate of Change | dv/dt | 10 | V/ns | 2 | |||
| Thermal Resistance, Junction-to-Lead | RθJL | 22 | °C/W | TL = 25°C | 2 |
CAD (KiCad official)
- Symbol:
MBRS1100T3G - Footprint:
Diode_SMD:D_SMB - 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
- 3D model files:
mbrs1100t3g-etched.step/mbrs1100t3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbrs1100t3g.step/mbrs1100t3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (4 pp, sha256
7587a510306fa1af, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MBRS1100T3G
**onsemi** · Schottky Barrier Diodes (SBD) · SMB(DO-214AA)
MBRS1100T3G from onsemi, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMB(DO-214AA) |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Junction Temperature | TJ | -65 | | 175 | °C | | 2 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.75 | V | iF = 1.0 A, TJ = 25°C; pulse test (Note 2) | 2 |
| Maximum Instantaneous Reverse Current | IR | | | 0.5 | mA | Rated dc Voltage, TJ = 25°C (Note 2) | 2 |
| Maximum Instantaneous Reverse Current | IR | | | 5 | mA | Rated dc Voltage, TJ = 100°C (Note 2) | 2 |
| Peak Repetitive Reverse Voltage (MBRS1100T3) | VRRM | | | 100 | V | | 2 |
| Working Peak Reverse Voltage (MBRS1100T3) | VRWM | | | 100 | V | | 2 |
| DC Blocking Voltage (MBRS1100T3) | VR | | | 100 | V | | 2 |
| Average Rectified Forward Current | IF(AV) | | | 1 | A | TL = 163°C | 2 |
| Average Rectified Forward Current | IF(AV) | | | 2 | A | TL = 148°C | 2 |
| Non-Repetitive Peak Surge Current | IFSM | | | 50 | A | Surge applied at rated load conditions, halfwave, single phase, 60 Hz | 2 |
| Voltage Rate of Change | dv/dt | | | 10 | V/ns | | 2 |
| Thermal Resistance, Junction-to-Lead | RθJL | | 22 | | °C/W | TL = 25°C | 2 |
## CAD (KiCad official)
- Symbol: `MBRS1100T3G`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
- 3D model files: `mbrs1100t3g-etched.step` / `mbrs1100t3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbrs1100t3g.step` / `mbrs1100t3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/mbrs1100t3-d.pdf) (4 pp, sha256 `7587a510306fa1af`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mbrs1100t3g-datasheet.pdf)