component
MBRS1100
Public Made by Adomby adom
EIC Semicon Schottky Barrier Diodes (SBD), SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MBRS1100
EIC Semicon · Schottky Barrier Diodes (SBD) · SMB
MBRS1100 from EIC Semicon, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the SMB molded body; the part is rated for 100 V VRRM/VDC and 1.0 A average forward current at TL = 120°C. |
| 2 | A | passive | Anode, the end opposite the color band; maximum forward voltage is 0.75 V at IF = 1.0 A, TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | EIC Semicon |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Reverse Voltage | VRRM | 100 | V | 1 | |||
| Maximum Working Peak Reverse Voltage | VRWM | 100 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 100 | V | 1 | |||
| Maximum Average Rectified Forward Current | IF(AV) | 1 | A | TL = 120°C | 1 | ||
| Maximum Average Rectified Forward Current | IF(AV) | 2 | A | TL = 100°C | 1 | ||
| Non-repetitive Peak Surge Current | IFSM | 50 | A | Surge applied at rated load conditions half wave, single phase, 60Hz | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.75 | V | IF = 1.0 A, TJ = 25°C; pulse width 300μs, duty cycle ≤ 2% | 1 | ||
| Maximum Instantaneous Reverse Current | IR | 0.5 | mA | Rated dc voltage, Tj = 25°C | 1 | ||
| Maximum Instantaneous Reverse Current | IR | 5 | mA | Rated dc voltage, Tj = 100°C | 1 | ||
| Thermal Resistance Junction to Lead | RθJL | 22 | °C/W | TL = 25°C | 1 | ||
| Operating Junction Temperature | TJ | -65 | 150 | °C | 1 | ||
| Typical Capacitance | 160 | pF | at 0 V | 2 |
CAD (KiCad official)
- Symbol:
MBRS1100 - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
mbrs1100-etched.step/mbrs1100-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbrs1100.step/mbrs1100.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: EIC Semicon datasheet (2 pp, sha256
f523b58d788cf4a1, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MBRS1100
**EIC Semicon** · Schottky Barrier Diodes (SBD) · SMB
MBRS1100 from EIC Semicon, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the SMB molded body; the part is rated for 100 V VRRM/VDC and 1.0 A average forward current at TL = 120°C. |
| 2 | A | passive | Anode, the end opposite the color band; maximum forward voltage is 0.75 V at IF = 1.0 A, TJ = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | EIC Semicon |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Reverse Voltage | VRRM | | | 100 | V | | 1 |
| Maximum Working Peak Reverse Voltage | VRWM | | | 100 | V | | 1 |
| Maximum DC Blocking Voltage | VDC | | | 100 | V | | 1 |
| Maximum Average Rectified Forward Current | IF(AV) | | | 1 | A | TL = 120°C | 1 |
| Maximum Average Rectified Forward Current | IF(AV) | | | 2 | A | TL = 100°C | 1 |
| Non-repetitive Peak Surge Current | IFSM | | | 50 | A | Surge applied at rated load conditions half wave, single phase, 60Hz | 1 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.75 | V | IF = 1.0 A, TJ = 25°C; pulse width 300μs, duty cycle ≤ 2% | 1 |
| Maximum Instantaneous Reverse Current | IR | | | 0.5 | mA | Rated dc voltage, Tj = 25°C | 1 |
| Maximum Instantaneous Reverse Current | IR | | | 5 | mA | Rated dc voltage, Tj = 100°C | 1 |
| Thermal Resistance Junction to Lead | RθJL | | | 22 | °C/W | TL = 25°C | 1 |
| Operating Junction Temperature | TJ | -65 | | 150 | °C | | 1 |
| Typical Capacitance | | | 160 | | pF | at 0 V | 2 |
## CAD (KiCad official)
- Symbol: `MBRS1100`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `mbrs1100-etched.step` / `mbrs1100-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbrs1100.step` / `mbrs1100.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [EIC Semicon datasheet](docs/mbrs1100-datasheet.pdf) (2 pp, sha256 `f523b58d788cf4a1`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mbrs1100-datasheet.pdf)