component

MBRA160T3G

Public Made by Adom

by adom

onsemi Schottky Barrier Diodes (SBD), SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentdiodesmbra160t3gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
mbra160t3g / README.md
History Download
Ray Publish 0.1.0 f8cdefb 7d ago

MBRA160T3G

onsemi · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)

MBRA160T3G from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode is marked by the polarity band on the SMA package, and the datasheet's Style 1 pinout assigns pin 1 as the cathode.
2 ANODE passive Anode is pin 2 of the Style 1 SMA pinout, opposite the polarity-band cathode.

Key specifications

Parameter Value
Manufacturer onsemi
Package SMA(DO-214AC)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Repetitive Reverse Voltage VRRM 60 V 2
Working Peak Reverse Voltage VRWM 60 V 2
DC Blocking Voltage VR 60 V 2
Average Rectified Forward Current IO 1 A At rated VR, TC = 105°C 2
Average Rectified Forward Current IO 2.1 A At rated VR, TC = 70°C 2
Non-Repetitive Peak Surge Current IFSM 60 A Surge at rated load, halfwave, single phase, 60 Hz 2
Storage/Operating Case Temperature Tstg, TC -55 150 °C 2
Operating Junction Temperature TJ -55 150 °C Note 1 2
Voltage Rate of Change dv/dt 10000 V/s Rated VR, TJ = 25°C 2
Maximum Instantaneous Forward Voltage VF 0.51 V IF = 1.0 A, TJ = 25°C (Note 3) 2
Maximum Instantaneous Forward Voltage VF 0.475 V IF = 1.0 A, TJ = 125°C (Note 3) 2
Maximum Instantaneous Reverse Current IR 0.2 mA VR = 60 V, TJ = 25°C 2
Maximum Instantaneous Reverse Current IR 20 mA VR = 60 V, TJ = 125°C 2
Thermal Resistance, Junction-to-Lead RθJL 35 °C/W Mounted on 2 in square FR4 PC board, 1 in square total pad (Note 2) 2
Thermal Resistance, Junction-to-Ambient RθJA 86 °C/W Mounted on 2 in square FR4 PC board, 1 in square total pad (Note 2) 2

CAD (KiCad official)

  • Symbol: MBRA160T3G
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
  • 3D model files: mbra160t3g-etched.step / mbra160t3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbra160t3g.step / mbra160t3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 9909c756a08dd956, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF