# MBR30L80CT

**NH** · Schottky Diodes · TO-220AB

MBR30L80CT from NH, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (Pin1) in the dual common-cathode pair; rated 80 V VRRM and 15 A per diode test current (30 A total average forward current). |
| 2 | K/CASE | passive | Common cathode of both Schottky diodes (Pin2), connected to the CASE (mounting tab) per the marking and polarity diagram. |
| 3 | A2 | passive | Anode of the second Schottky diode (Pin3) in the dual common-cathode pair; rated 80 V VRRM and 15 A per diode test current (30 A total average forward current). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | NH |
| Package | TO-220AB |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 80 | V |  | 1 |
| Maximum average forward rectified current | IF(AV) |  |  | 30 | A | see fig.1 | 1 |
| Peak forward surge current | IFSM |  |  | 220 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) | 1 |
| Storage temperature range | TSTD | -55 |  | 150 | ℃ |  | 1 |
| Operating junction temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Typical thermal resistance | RθJC |  | 2 |  | ℃/W | note 2: mounted on 75mm x 45mm x 2.5mm aluminum plate heatsink | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.61 | 0.68 | V | IF= 15A, TA=25℃ (note1) | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.53 | 0.63 | V | IF= 15A, TA=125℃ (note1) | 1 |
| Reverse current per diode | IR |  |  | 5 | uA | 80%*VRRM, TA=25℃ (note1) | 1 |
| Reverse current per diode | IR |  | 2.5 | 4.5 | mA | 80%*VRRM, TA=125℃ (note1) | 1 |

## CAD (KiCad official)

- Symbol: `MBR30L80CT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `mbr30l80ct-etched.step` / `mbr30l80ct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbr30l80ct.step` / `mbr30l80ct.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [NH datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590923753553539072) (5 pp, sha256 `316b900db299f630`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mbr30l80ct-datasheet.pdf)