component

MBQ40T65QESTH

Public Made by Adom

by adom

MagnaChip Semicon IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MBQ40T65QESTH

MagnaChip Semicon · IGBTs · TO-247

MBQ40T65QESTH from MagnaChip Semicon, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal that controls the IGBT, with a maximum gate-emitter voltage of ±20 V and a threshold VGE(th) of 3.5 V min, 5.0 V typ and 6.5 V max at IC = 40 mA.
2 C passive Collector terminal, rated for VCE up to 650 V and DC collector current of 80 A at TC=25°C and 40 A at TC=100°C.
3 E passive Emitter terminal, which carries the collector current and is the reference for the gate-emitter voltage, with the co-packed diode forward current rated 40 A at TC=25°C and 20 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer MagnaChip Semicon
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: MBQ40T65QESTH
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: mbq40t65qesth-etched.step / mbq40t65qesth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbq40t65qesth.step / mbq40t65qesth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MagnaChip Semicon datasheet (8 pp, sha256 eedbdca0aeab9207, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF