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MAX202-HXY

Public Made by Adom

by adom

HXY MOSFET RS232 ICs, SOP-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MAX202-HXY

HXY MOSFET · RS232 ICs · SOP-16

MAX202-HXY from HXY MOSFET, in a SOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C1+ passive Positive terminal of charge-pump capacitor C1 (0.1 µF recommended).
2 V+ power_out Positive voltage generated by the charge pump, with an external 0.1 µF capacitor (C3) to VCC or GND.
3 C1- passive Negative terminal of charge-pump capacitor C1 (0.1 µF recommended).
4 C2+ passive Positive terminal of charge-pump capacitor C2 (0.1 µF recommended).
5 C2- passive Negative terminal of charge-pump capacitor C2 (0.1 µF recommended).
6 V- power_out Negative voltage generated by the charge pump, with an external 0.1 µF capacitor (C4) to GND.
7 T2OUT output RS-232 driver 2 output (RS-232 levels), ±15 kV HBM ESD protected.
8 R2IN input RS-232 receiver 2 input (RS-232 levels), ±30 V input range, 5 kΩ nominal input resistance, ±15 kV HBM ESD protected.
9 R2OUT output Receiver 2 output at TTL/CMOS levels.
10 T2IN input Driver 2 input at TTL/CMOS levels (VIH min 2 V, VIL max 0.8 V).
11 T1IN input Driver 1 input at TTL/CMOS levels (VIH min 2 V, VIL max 0.8 V).
12 R1OUT output Receiver 1 output at TTL/CMOS levels.
13 R1IN input RS-232 receiver 1 input (RS-232 levels), ±30 V input range, 5 kΩ nominal input resistance, ±15 kV HBM ESD protected.
14 T1OUT output RS-232 driver 1 output (RS-232 levels), ±15 kV HBM ESD protected.
15 GND power_in Ground.
16 VCC power_in Supply voltage input, 4.5 V to 5.5 V recommended (absolute maximum 6.0 V), bypass with at least 0.1 µF to ground.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-16
Category Communication Interface Chip
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC 4.5 5 5.5 V C1-C4 = 0.1µF at VCC = 5V ±0.5V 3
Driver high-level input voltage (DIN) VIH 2 V 3
Driver low-level input voltage (DIN) VIL 0.8 V 3
Driver input voltage (DIN) VI 0 5.5 V 3
Receiver input voltage VI -30 30 V 3
Supply Voltage VCC -0.3 6 V 3
Transmitter Low Output Voltage V- -0.3 -14 V 3
Receiver Input Voltage VRIN -30 30 V 3
Storage Temperature Range TSTG -65 150 °C 3
ESD protection Human-Body Model 15 kV DOUT, RIN pins; printed ±15 3
Supply current ICC 8 15 mA No load, VCC = 5 V 3
Driver high-level output voltage VOH 5 9 V DOUT at RL = 3kΩ to GND, DIN = GND 4
Driver low-level output voltage VOL -5 -9 V DOUT at RL = 3kΩ to GND, DIN = VCC 4
Driver high-level input current IIH 0 200 µA VI = VCC 4
Driver low-level input current IIL 0 -200 µA VI at 0V 4
Driver short-circuit output current IOS 10 60 mA VCC = 5.5V, VO = 0V; printed ±10, ±60 4
Driver output resistance rO 300 Ω VCC, V+, and V- = 0V, VO = ±2V 4
Receiver high-level output voltage VOH 3.5 V IOH = -1mA 4
Receiver low-level output voltage VOL 0.4 V IOL = 1.6mA 4
Positive-going input threshold voltage VIT+ 1.7 2.4 V VCC = 5V, TA = 25°C 4
Negative-going input threshold voltage VIT- 0.8 1.2 V VCC = 5V, TA = 25°C 4
Input hysteresis (VIT+, VIT-) Vhys 0.2 0.5 1 V 4
Receiver input resistance ri 3 5 7 kΩ VI = ±3V to ±25V 4
Driver slew rate, transition region SR(tr) 3 6 30 V/µs CL = 50 to 1000pF, RL = 3kΩ to 7 kΩ, VCC = 5V 4
Driver pulse skew tsk(p) 300 ns CL = 150 to 2500pF, RL = 3kΩ to 7 kΩ 4
Driver propagation delay, low- to high-level tPLH(D) 2 µs CL = 2500pF, RL = 3kΩ, all drivers loaded 4
Driver propagation delay, high- to low-level tPHL(D) 2 µs CL = 2500pF, RL = 3kΩ, all drivers loaded 4
Maximum data rate 120 kbit/s CL = 50pF to 1000pF, RL = 3kΩ to 7kΩ, one DOUT switching 4
Receiver propagation delay, low- to high-level tPLH(R) 0.5 10 µs CL = 150pF 4
Receiver propagation delay, high- to low-level tPHL(R) 0.5 10 µs CL = 150pF 4
Receiver pulse skew tsk(p) 300 ns CL = 150pF 4
Junction-to-ambient thermal resistance RθJA 84.6 °C/W 3
Junction-to-case (top) thermal resistance RθJC(top) 43.5 °C/W 3
Junction-to-board thermal resistance RθJB 43.2 °C/W 3
Junction-to-top characterization parameter ψJT 10.4 °C/W 3
Junction-to-board characterization parameter ψJB 42.8 °C/W 3

CAD (KiCad official)

  • Symbol: MAX202-HXY
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOP-16 (KiCad packages3D, STEP)
  • 3D model files: max202-hxy-etched.step / max202-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); max202-hxy.step / max202-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 98d5d04bc4bccc48, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF