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Contents

README

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MAX12930EASA+T

Analog Devices Inc./Maxim Integrated · Digital Isolators · SOIC-8

MAX12930EASA+T from Analog Devices Inc./Maxim Integrated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDDA power_in Power supply for side A (1.71V to 5.5V), bypass with a 0.1µF ceramic capacitor to GNDA.
2 IN1 input Logic input for channel 1, referenced to GNDA.
3 IN2 input Logic input for channel 2, referenced to GNDA.
4 GNDA power_in Ground reference for side A.
5 GNDB power_in Ground reference for side B.
6 OUT2 output Push-pull logic output of channel 2, referenced to GNDB.
7 OUT1 output Push-pull logic output of channel 1, referenced to GNDB.
8 VDDB power_in Power supply for side B (1.71V to 5.5V), bypass with a 0.1µF ceramic capacitor to GNDB.

Key specifications

Parameter Value
Manufacturer Analog Devices Inc./Maxim Integrated
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage A VDDA 1.71 5.5 V Relative to GNDA 3
Supply Voltage B VDDB 1.71 5.5 V Relative to GNDB 3
Undervoltage-Lockout Threshold VUVLO_ 1.5 1.6 1.66 V VDD_ rising 3
Undervoltage-Lockout Threshold Hysteresis VUVLO_HYST 45 mV 3
Supply Current Side A, 1MHz IDDA 0.31 0.54 mA 1MHz square wave, CL = 0pF, VDDA = 3.3V 3
Supply Current Side A, 12.5MHz IDDA 0.8 1.2 mA 12.5MHz square wave, CL = 0pF, VDDA = 3.3V 3
Supply Current Side A, 50MHz IDDA 2.09 2.91 mA 50MHz square wave, CL = 0pF, VDDA = 3.3V 3
Supply Current Side B, 1MHz IDDB 0.47 0.79 mA 1MHz square wave, CL = 0pF, VDDB = 3.3V 3
Supply Current Side B, 12.5MHz IDDB 1.02 1.4 mA 12.5MHz square wave, CL = 0pF, VDDB = 3.3V 3
Supply Current Side B, 50MHz IDDB 2.81 3.39 mA 50MHz square wave, CL = 0pF, VDDB = 3.3V 3
Input High Voltage (x VDD_) VIH 0.7 x VDD_ 2.25V ≤ VDD_ ≤ 5.5V 4
Input High Voltage (x VDD_) VIH 0.75 x VDD_ 1.71V ≤ VDD_ < 2.25V 4
Input Low Voltage VIL 0.8 V 2.25V ≤ VDD_ ≤ 5.5V 4
Input Low Voltage VIL 0.7 V 1.71V ≤ VDD_ < 2.25V 4
Input Hysteresis VHYS 410 mV MAX1293_B/E 4
Input Pulldown Current IPD 1.5 5 10 µA IN_, MAX1293_E/F 4
Input Capacitance CIN 2 pF IN_, fSW = 1MHz 4
Output Voltage Low VOL 0.4 V IOUT = 4mA sink 5
Common-Mode Transient Immunity CMTI 50 kV/µs IN_ = GND_ or VDD_ 5
Maximum Data Rate DRMAX 25 Mbps 5
Minimum Pulse Width PWMIN 40 ns 5
Glitch Rejection 10 17 29 ns 5
Propagation Delay tPLH tPLH 17.4 23.9 32.5 ns 4.5V ≤ VDD_ ≤ 5.5V 5
Propagation Delay tPLH tPLH 17.6 24.4 33.7 ns 3.0V ≤ VDD_ ≤ 3.6V 5
Propagation Delay tPLH tPLH 18.3 25.8 36.7 ns 2.25V ≤ VDD_ ≤ 2.75V 5
Propagation Delay tPLH tPLH 20.7 29.6 43.5 ns 1.71V ≤ VDD_ ≤ 1.89V 5
Propagation Delay tPHL tPHL 16.9 23.4 33.6 ns 4.5V ≤ VDD_ ≤ 5.5V 5
Propagation Delay tPHL tPHL 17.2 24.2 35.1 ns 3.0V ≤ VDD_ ≤ 3.6V 5
Propagation Delay tPHL tPHL 17.8 25.4 38.2 ns 2.25V ≤ VDD_ ≤ 2.75V 5
Propagation Delay tPHL tPHL 19.8 29.3 45.8 ns 1.71V ≤ VDD_ ≤ 1.89V 5
Pulse Width Distortion PWD 0.4 4 ns 5
Channel-to-Channel Skew (Same Direction) tSCSLH 2 ns MAX12930 only 5
Peak Eye Diagram Jitter TJIT(PK) 250 ps 25Mbps 6
VDDA to GNDA VDDA -0.3 6 V 2
VDDB to GNDB VDDB -0.3 6 V 2
IN_ to respective GND IN_ -0.3 6 V Side A to GNDA, Side B to GNDB 2
Operating Temperature Range TA -40 125 °C 2
Maximum Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -60 150 °C 2
Soldering Temperature (reflow) 260 °C 2
Junction to Ambient Thermal Resistance θJA 172.8 °C/W 8 Narrow SOIC, four-layer board 2
Junction to Case Thermal Resistance θJC 67.6 °C/W 8 Narrow SOIC, four-layer board 2
ESD Human Body Model -3 3 kV all pins 8
Maximum Withstand Isolation Voltage VISO 3000 VRMS fSW = 60Hz, duration = 60s 10
Barrier Capacitance Side A to Side B CIO 2 pF fSW = 1MHz 10

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pet The MAX12930-MAX12931 narrow-body SOIC are certified to DIN VDE V 0884-11: 2017-01 Basic Insulation, Maximum Transient Isolation Voltage 4200VPK, Maximum Repetitive Peak Isolation Voltage 630VPK. 9

CAD (KiCad official)

  • Symbol: MAX12930EASA+T
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: max12930easa-t-etched.step / max12930easa-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); max12930easa-t.step / max12930easa-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices Inc./Maxim Integrated datasheet (24 pp, sha256 1082a23cefedacbf, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF