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MA730GQ-Z

Public Made by Adom

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Monolithic Power Systems MPS Global Sourcing Parts, QFN-16(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MA730GQ-Z

Monolithic Power Systems MPS · Global Sourcing Parts · QFN-16(3x3)

MA730GQ-Z from Monolithic Power Systems MPS, in a QFN-16(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SSD output Synchronous serial interface (SSI) data output.
2 A output Incremental ABZ output channel A (12-bit quadrature emulation, 1 to 1024 pulses per revolution).
3 Z output Incremental ABZ index output channel Z.
4 MOSI input SPI data input; MOSI has an internal pull-down resistor.
5 CS input SPI chip select; CS has an internal pull-up resistor.
6 B output Incremental ABZ output channel B, shifted a quarter of the pulse period from A.
7 MISO tri_state SPI data output; MISO has an internal pull-down resistor that is enabled in the high-impedance state.
8 GND power_in Supply ground.
9 PWM output PWM output (14-bit).
10 TEST passive Factory use only; connect TEST to ground.
11 MGL output Digital output indicating the magnetic field strength is below the MGLT level.
12 SCLK input SPI clock input with internal pull-down.
13 VDD power_in 3.3V supply.
14 NC unconnected No connection; leave NC unconnected.
15 SSCK input SSI clock input with internal pull-down.
16 MGH output Digital output indicating the magnetic field strength is above the MGHT level.
17 PAD passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Monolithic Power Systems MPS
Package QFN-16(3x3)
Category Global Sourcing Parts
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VDD 3 3.3 3.6 V 4
Supply current IDD 10.2 11.7 13.8 mA From -40°C to +125°C 4
Operating temperature Top -40 125 °C 4
Applied magnetic field B 40 60 mT 4
Supply voltage -0.5 4.6 V 3
Input pin voltage VI -0.5 6 V 3
Output pin voltage VO -0.5 4.6 V 3
Continuous power dissipation 2 W TA = +25°C 3
Junction temperature 125 °C 3
Storage temperature -65 150 °C 3
Effective resolution 13 13.8 14.5 bits 3σ deviation of the noise distribution 5
Noise RMS 0.003 0.004 0.007 deg 5
Refresh rate 850 980 1100 kHz 5
Data output length 16 16 bits 5
Power-up time 260 ms 5
Latency 8 10 µs Constant speed propagation delay 5
INL at 25°C 0.7 deg At room temperature over the full field range 5
INL between -40°C to +125°C 1.1 deg Over the full temperature range and field range 5
Temperature induced drift 0.015 0.04 deg/°C at room temperature 5
Temperature induced variation 0.5 1.2 deg From 25°C to 85°C 5
Temperature induced variation 1 2.1 deg From 25°C to 125°C 5
Magnetic field induced 0.005 deg/mT 5
Voltage supply induced 0.3 deg/V 5
PWM frequency Fpwm 840 970 1090 Hz 5
PWM resolution 13 13.8 14 bits 5
Resolution - edges per turn 4 4096 edges Programmable 5
Pulses per channel per turn PPT+1 1 1024 pulses Programmable 5
ABZ hysteresis H 0.1 deg 5
Systematic jitter 11 % For PPT = 1023, between 0 and 100krpm, up to 60mT 5
Systematic jitter 7 % For PPT = 127, between 0 and 100krpm 5
Random jitter (3σ) 4.2 % For PPT = 255, between 0 and 100krpm 5
Random jitter (3σ) 0.5 % For PPT = 127, between 0 and 100krpm 5
Overall ABZ jitter 0.2 deg Up to 60mT 5
Magnetic field detection accuracy 5 mT 6
Magnetic field detection hysteresis MagHys 6 mT 6
Input high voltage VIH 2.5 5.5 V 6
Input low voltage VIL -0.3 0.8 V 6
Output low voltage VOL 0.4 V IOL = 4mA 6
Output high voltage VOH 2.4 V IOH = 4mA 6
Pull-up resistor RPU 46 66 97 kΩ 6
Pull-down resistor RPD 43 55 97 kΩ 6
Rising edge slew rate TR 0.7 V/ns CL = 50pF 6
Falling edge slew rate TF 0.7 V/ns CL = 50pF 6
Filter cutoff frequency Fcutoff 23 Hz 5
ABZ update rate 16 MHz 5
Temperature drift -600 ppm/°C 6
Thermal resistance junction-to-ambient, QFN-16 (3mmx3mm) θJA 50 °C/W Measured on JESD51-7, 4-layer PCB 3
Thermal resistance junction-to-case, QFN-16 (3mmx3mm) θJC 12 °C/W 3

CAD (KiCad official)

  • Symbol: MA730GQ-Z
  • Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
  • 3D model: QFN-16(3x3) (KiCad packages3D, STEP)
  • 3D model files: ma730gq-z-etched.step / ma730gq-z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ma730gq-z.step / ma730gq-z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Monolithic Power Systems MPS datasheet (29 pp, sha256 94030ed63efc0c19, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF