component

M8050

Public Made by Adom

by adom

BORN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
viewers m8050: viewers · Ray 23d ago
m8050-etched.glb m8050: factory component page (tier=lcsc) · Ray 23d ago
m8050-etched.step m8050: factory component page (tier=lcsc) · Ray 23d ago
m8050-hero.glb m8050: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
m8050-hero.overlay.json Publish 0.1.0 · Ray 23d ago
m8050.glb Publish 0.1.0 · Ray 23d ago
m8050.kicad_mod Publish 0.1.0 · Ray 23d ago
m8050.kicad_sym Publish 0.1.0 · Ray 23d ago
m8050.lbr Publish 0.1.0 · Ray 23d ago
m8050.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json m8050: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 17d ago
README.md m8050: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 17d ago

M8050

BORN · Bipolar (BJT) · SOT-23

M8050 from BORN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor, which drives the device; the datasheet gives VBE(sat) of 1.20 V max at IC=800 mA, IB=80 mA.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of 6 V minimum at IE=100 uA, IC=0 and a maximum emitter-base voltage VEBO of 6 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet limits are VCBO 40 V, VCEO 25 V, continuous collector current IC 0.8 A, and collector dissipation PC 0.2 W.

Key specifications

Parameter Value
Manufacturer BORN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC=100uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 25 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=100uA, IC=0 1
Collector cut-off current ICBO 100 nA VCB=35V, IE=0 1
DC current gain hFE(1) 45 VCE=1V, IC=5mA 1
DC current gain hFE(2) 80 400 VCE=1V, IC=100mA 1
DC current gain hFE(3) 40 VCE=1V, IC=800mA 1
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=800mA, IB=80mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=800mA, IB=80mA 1
Transition frequency fT 150 MHz VCE=6V, IC=20mA, f=30MHz 1
Collector-Base Voltage VCBO 40 V 1
Collector-Emitter Voltage VCEO 25 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current -Continuous IC 0.8 A 1
Collector Dissipation PC 0.2 W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: M8050
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: m8050-etched.step / m8050-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); m8050.step / m8050.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (2 pp, sha256 49a857e63916749f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF