component

LWT1H10AM

Public Made by Adom

by adom

Lewa Micro MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LWT1H10AM

Lewa Micro · MOSFETs · SOT-23

LWT1H10AM from Lewa Micro, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated at ±12V maximum, threshold VGS(TH) 1.5V min / 1.8V typ at ID=250µA.
2 S passive Source; body-diode anode side, continuous current 1.0A at TA=25°C and pulsed drain current 3.0A.
3 D passive Drain; drain-to-source voltage rated at 100V maximum, continuous drain current 1.0A at TA=25°C.

Key specifications

Parameter Value
Manufacturer Lewa Micro
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 100 V 1
Gate-to-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 1 A TA=25℃ 1
Continuous Drain Current ID 0.63 A TA=100℃ 1
Pulsed Drain Current IDM 3 A a1: Repetitive rating; pulse width limited by maximum junction temperature 1
Power Dissipation PD 0.95 W 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Temperature for Soldering TL 260 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 132 ℃/W a2: Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. 1
Drain to Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS=100V, VGS=0V 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+12V, VDS=0V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-12V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1.5 1.8 2.3 V VDS=VGS, ID=250µA 2
Drain-to-Source On-Resistance RDS(ON)1 370 450 mΩ VGS=10V, ID=1.0A 2
Drain-to-Source On-Resistance RDS(ON)2 420 550 mΩ VGS=4.5V, ID=1.0A 2
Diode Forward Voltage VSD 1 V IS=1.0A, VGS=0V 2

CAD (KiCad official)

  • Symbol: LWT1H10AM
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lwt1h10am-etched.step / lwt1h10am-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lwt1h10am.step / lwt1h10am.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Lewa Micro datasheet (10 pp, sha256 d84e29514af2173f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF