component
LWS6080AL
Public Made by Adomby adom
Lewa Micro MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLWS6080AL
Lewa Micro · MOSFETs · SOT-23-3L
LWS6080AL from Lewa Micro, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±20 V, threshold -1.65 V typ. (-1.0 V to -2.1 V range as listed), controls the P-channel MOSFET. |
| 2 | S | passive | Source; continuous drain current rated -3.5 A at TA=25 ℃ and body diode forward current -3.5 A. |
| 3 | D | passive | Drain; drain-to-source voltage rated -60 V and pulsed drain current -14 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -2.2 | A | TA=100°C | 1 | ||
| Pulsed Drain Current | IDM | -14 | A | 1 | |||
| Power Dissipation | PD | 1.7 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | °C | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 73.5 | °C/W | Device on 40 mm x 40 mm x 1.5 mm FR4 PCB, 6 cm² copper drain area (note a2) | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -1.65 | -2.1 | V | VDS=VGS, ID=-250µA | 2 |
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON)1 | 60 | 80 | mΩ | VGS=-10V, ID=-3.5A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON)2 | 75 | 100 | mΩ | VGS=-4.5V, ID=-3.0A | 2 | |
| Diode Forward Current | IS | -3.5 | A | 2 | |||
| Diode Pulse Current | ISM | -14 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-3.5A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
LWS6080AL - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
lws6080al-etched.step/lws6080al-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws6080al.step/lws6080al.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
ad69a3e6a9838d18, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).