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Generated by kicad-footprint-generator · KiCad file format 20260206

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LWS6040A4

Lewa Micro · MOSFETs · TO-252

LWS6040A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the P-channel MOSFET, with a maximum gate-to-source voltage of ±20 V.
2	D	passive	Drain, the center lead and the mounting tab, rated for drain-to-source voltage of -60 V, continuous drain current of -32 A at TC=25℃ and pulsed drain current of -128 A.
3	S	passive	Source of the P-channel MOSFET, with body diode forward current of -32 A and diode pulse current of -128 A.

Key specifications

Parameter	Value
Manufacturer	Lewa Micro
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Voltage	VDSS	-60			V		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID	-32			A	TC=25℃	1
Continuous Drain Current	ID	-20			A	TC=100℃	1
Pulsed Drain Current	IDM	-128			A		1
Power Dissipation	PD			89	W		1
Operating Junction and Storage Temperature Range	TJ, TSTG	-55		150	℃		1
Maximum Temperature for Soldering	TL			260	℃		1
Thermal Resistance, Junction-to-Ambient	RθJA		47		℃/W	Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection	1
Thermal Resistance, Junction-to-Case	RθJC		1.4		℃/W		1
Drain-to-Source Breakdown Voltage	V(BR)DSS	-60			V	VGS=0V, ID=-250µA	2
Drain to Source Leakage Current	IDSS			-1	μA	VDS=-60V, VGS=0V	2
Gate to Source Forward Leakage	IGSS(F)			100	nA	VGS=+20V, VDS=0V	2
Gate to Source Reverse Leakage	IGSS(R)			-100	nA	VGS=-20V, VDS=0V	2
Gate Threshold Voltage	VGS(TH)		-1.8	-2.3	V	VDS=VGS, ID=-250µA	2
Drain-to-Source On-Resistance	RDS(ON)1		38	46	mΩ	VGS=-10V, ID=-20A	2
Drain-to-Source On-Resistance	RDS(ON)2		48	60	mΩ	VGS=-4.5V, ID=-10A	2
Gate resistance	RG		6		Ω	VGS=0V, VDS=0V, f=1MHz	2
Diode Forward Current	IS			-32	A		2
Diode Pulse Current	ISM			-128	A		2
Diode Forward Voltage	VSD			-1.2	V	IS=-10A, VGS=0V	2

CAD (KiCad official)

Symbol: LWS6040A4
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: lws6040a4-etched.step / lws6040a4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lws6040a4.step / lws6040a4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Lewa Micro datasheet (10 pp, sha256 cb6bb713e25c475f, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF