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Ray Publish 0.1.0 048644c 24d ago

LWS6028AS

Lewa Micro · MOSFETs · SOP-8

LWS6028AS from Lewa Micro, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drawing labels this pin S, and the part has a -60V VDSS and -10A continuous drain current rating.
2 S passive Source of the P-channel MOSFET; the drawing labels this pin S, and the part has a -60V VDSS and -10A continuous drain current rating.
3 S passive Source of the P-channel MOSFET; the drawing labels this pin S, and the part has a -60V VDSS and -10A continuous drain current rating.
4 G input Gate of the P-channel MOSFET; the absolute maximum gate-to-source voltage is ±20V and the threshold voltage is -1.8V typical.
5 D passive Drain of the P-channel MOSFET; the drawing labels this pin D, and the part has a -60V drain-to-source voltage rating and -40A pulsed drain current.
6 D passive Drain of the P-channel MOSFET; the drawing labels this pin D, and the part has a -60V drain-to-source voltage rating and -40A pulsed drain current.
7 D passive Drain of the P-channel MOSFET; the drawing labels this pin D, and the part has a -60V drain-to-source voltage rating and -40A pulsed drain current.
8 D passive Drain of the P-channel MOSFET; the drawing labels this pin D, and the part has a -60V drain-to-source voltage rating and -40A pulsed drain current.

Key specifications

Parameter Value
Manufacturer Lewa Micro
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -60 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TA=25℃ 1
Continuous Drain Current ID -6.4 A TA=100℃ 1
Pulsed Drain Current IDM -40 A Repetitive rating; pulse width limited by maximum junction temperature 1
Power Dissipation PD 3.1 W TA=25℃ 1
Single Pulse Avalanche Energy EAS 72 mJ VDD=-30V, L=0.1mH, RG=25Ω, Starting Tj=25℃ 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Temperature for Soldering TL 260 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 40 ℃/W Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection 1
Drain-to-Source Breakdown Voltage -60 V VGS=0V, ID=-250µA 2
Drain-to-Source Leakage Current IDSS -1 µA VDS=-60V, VGS=0V 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+20V, VDS=0V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -1.3 -1.8 -2.3 V VDS=VGS, ID=-250µA 2
Drain-to-Source On-Resistance RDS(ON)1 18 mΩ VGS=-10V, ID=-10A 2
Diode Forward Current IS -10 A 2
Diode Pulse Current ISM -40 A 2
Diode Forward Voltage VSD -1.2 V IS=-10A, VGS=0V 2
Gate Resistance RG 7.3 Ω VGS=0V, VDS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: LWS6028AS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: lws6028as-etched.step / lws6028as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lws6028as.step / lws6028as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Lewa Micro datasheet (10 pp, sha256 5cb83e4206f891bf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF