component
LWS6016A4
Public Made by Adomby adom
Lewa Micro MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| lws6016a4-etched.glb | 17d ago |
| lws6016a4-etched.step | 17d ago |
| lws6016a4-hero.glb | 17d ago |
| lws6016a4-hero.overlay.json | 17d ago |
| lws6016a4.glb | 17d ago |
| lws6016a4.kicad_mod | 17d ago |
| lws6016a4.kicad_sym | 17d ago |
| lws6016a4.lbr | 17d ago |
| lws6016a4.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
LWS6016A4
Lewa Micro · MOSFETs · TO-252
LWS6016A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and a threshold VGS(TH) of -1.3 V typ (-1.0 V min, -2.3 V max per the electrical table). |
| 2 | D | passive | Drain, shared with the exposed tab; VDSS -60 V, continuous ID -55 A at TC=25℃ and pulsed IDM -220 A. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous diode forward current IS of -55 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -55 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -35 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -220 | A | 1 | |||
| Power Dissipation | PD | 100 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.25 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 60 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | μA | VDS=-60V, VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.2 | -1.8 | -2.3 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON)2 | 14 | 20 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Diode Forward Current | IS | -55 | A | 2 | |||
| Diode Pulse Current | ISM | -220 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.3 | V | IS=-20A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
LWS6016A4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lws6016a4-etched.step/lws6016a4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws6016a4.step/lws6016a4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
0f931354ff03956b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).