component
LWS60110H4
Public Made by Adomby adom
Lewa Micro MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
LWS60110H4
Lewa Micro · MOSFETs · TO-252
LWS60110H4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V (absolute maximum), threshold -2.0 V min to -4.0 V max at ID=-250µA. |
| 2 | D | passive | Drain (middle lead, connected to the mounting tab); VDSS -60 V, continuous drain current -12 A at TC=25℃, pulsed -48 A. |
| 3 | S | passive | Source; body diode continuous forward current -12 A and pulsed -48 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | µA | VDS=-60V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V, VDS=0V (as printed; verify) | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V (as printed; verify) | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -4 | V | VDS=VGS, ID=-250µA | 2 | |
| Drain-to-Source On-Resistance | RDS(ON) | 30 | 37 | mΩ | VGS=-10V, ID=-3.0A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-3.0A, VGS=0V | 2 | ||
| Diode Forward Current | IS | -12 | A | TC=25 °C | 2 | ||
| Diode Pulse Current | ISM | -48 | A | 2 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -12 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -7.6 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -48 | A | 1 | |||
| Single pulse avalanche energy | EAS | 16 | mJ | VDD=-30V, L=0.1mH, RG=25Ω, starting Tj=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | 260 | ℃ | 1 | ||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | a3: device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.16 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
LWS60110H4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lws60110h4-etched.step/lws60110h4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws60110h4.step/lws60110h4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
c36540d9bc6cf958, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LWS60110H4
**Lewa Micro** · MOSFETs · TO-252
LWS60110H4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V (absolute maximum), threshold -2.0 V min to -4.0 V max at ID=-250µA. |
| 2 | D | passive | Drain (middle lead, connected to the mounting tab); VDSS -60 V, continuous drain current -12 A at TC=25℃, pulsed -48 A. |
| 3 | S | passive | Source; body diode continuous forward current -12 A and pulsed -48 A at TC=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -60 | | | V | VGS=0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | -1 | µA | VDS=-60V, VGS=0V | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS=+20V, VDS=0V (as printed; verify) | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS=-20V, VDS=0V (as printed; verify) | 2 |
| Gate Threshold Voltage | VGS(TH) | -1 | | -4 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 30 | 37 | mΩ | VGS=-10V, ID=-3.0A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS=-3.0A, VGS=0V | 2 |
| Diode Forward Current | IS | | | -12 | A | TC=25 °C | 2 |
| Diode Pulse Current | ISM | | | -48 | A | | 2 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -12 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | -7.6 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | -48 | A | | 1 |
| Single pulse avalanche energy | EAS | | | 16 | mJ | VDD=-30V, L=0.1mH, RG=25Ω, starting Tj=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Maximum Temperature for Soldering | | | | 260 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 50 | ℃/W | a3: device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 4.16 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `LWS60110H4`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `lws60110h4-etched.step` / `lws60110h4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lws60110h4.step` / `lws60110h4.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Lewa Micro datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757012912911736832) (10 pp, sha256 `c36540d9bc6cf958`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lws60110h4-datasheet.pdf)