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LWS6008A8

Public Made by Adom

by adom

Lewa Micro MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LWS6008A8

Lewa Micro · MOSFETs · TO-220AB

LWS6008A8 from Lewa Micro, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rating is ±20 V, with threshold VGS(TH) of -2.0 V min to -2.4 V typ and -1.6 V as printed in the electrical table.
2 D passive Drain (also the metal tab); drain-to-source voltage is -60 V with continuous drain current of -110 A at TC=25℃ and pulsed drain current of -440 A.
3 S passive Source; body diode continuous forward current is -110 A and pulsed -440 A, with VSD test at IS=-15A.

Key specifications

Parameter Value
Manufacturer Lewa Micro
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -60 V 1
Continuous Drain Current ID -110 A TC=25℃ 1
Continuous Drain Current ID -70 A TC=100℃ 1
Pulsed Drain Current IDM -440 A 1
Gate-to-Source Voltage VGS -20 20 V 1
Power Dissipation PD 180 W 1
Single pulse avalanche energy EAS 882 mJ VDD=-30V, L=1.0mH, RG=25Ω, Starting Tj=25℃ 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Temperature for Soldering TL 260 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 copper area 1
Thermal Resistance, Junction-to-Case RθJC 0.69 ℃/W 1
Drain to Source Breakdown Voltage VDSS -60 V VGS=0V, ID=-250µA 2
Drain to Source Leakage Current IDSS -1 μA VDS=-60V, VGS=0V 2
Gate to Source Forward Leakage IGSS(F) -100 nA VGS=-20V, VDS=0V 2
Gate to Source Reverse Leakage IGSS(R) 100 nA VGS=+20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -1.6 -2 -2.4 V VDS=VGS, ID=-250µA 2
Drain-to-Source On-Resistance RDS(ON) 5.5 7 mΩ VGS=-10V, ID=-15A 2
Diode Forward Voltage VSD -1.2 V IS=-15A, VGS=0V 2
Diode Forward Current IS -110 A TC=25 °C 2
Diode Pulse Current ISM -440 A 2
Gate resistance RG 2 Ω VGS=0V, VDS=0V, f=1MHz 2
Input Capacitance Ciss 5403 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Output Capacitance Coss 941 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 48 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Total Gate Charge Qg 80 nC VGS=-10V, VDS=-30V, ID=-15A 2
Gate to Source Charge Qgs 15 nC VGS=-10V, VDS=-30V, ID=-15A 2
Gate to Drain Charge Qgd 11 nC VGS=-10V, VDS=-30V, ID=-15A 2
Turn-on Delay Time td(ON) 21 ns VGS=-10V, VDS=-30V, ID=-15A, RG=3.0Ω 2
Rise Time tr 44 ns VGS=-10V, VDS=-30V, ID=-15A, RG=3.0Ω 2
Turn-Off Delay Time td(OFF) 72 ns VGS=-10V, VDS=-30V, ID=-15A, RG=3.0Ω 2
Fall Time tf 61 ns VGS=-10V, VDS=-30V, ID=-15A, RG=3.0Ω 2

CAD (KiCad official)

  • Symbol: LWS6008A8
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: lws6008a8-etched.step / lws6008a8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lws6008a8.step / lws6008a8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Lewa Micro datasheet (10 pp, sha256 9b015b81ee94cc62, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF