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LWS6008A4

Lewa Micro · MOSFETs · TO-252

LWS6008A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20 V, threshold VGS(TH) -2.0 V min, -1.6 V typ, -2.4 V max as printed in the table.
2 D passive Drain (center stub lead and exposed tab); drain-to-source voltage -60 V, continuous drain current -100 A at TC=25℃, pulsed -400 A.
3 S passive Source; body diode forward current up to -100 A (diode pulse current -400 A) flows source-to-drain.

Key specifications

Parameter Value
Manufacturer Lewa Micro
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -60 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Single pulse avalanche energy EAS 882 mJ a2: VDD=-30V, L=1.0mH, RG=25Ω, starting Tj=25℃ 1
Continuous Drain Current TC=25℃ ID -100 A TC=25℃ 1
Continuous Drain Current TC=100℃ ID -63 A TC=100℃ 1
Pulsed Drain Current IDM -400 A a1: repetitive rating; pulse width limited by maximum junction temperature 1
Power Dissipation PD 160 W 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Temperature for Soldering 260 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62 ℃/W a3: device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection 1
Thermal Resistance, Junction-to-Case RθJC 0.78 ℃/W 1
Drain to Source Breakdown Voltage VDSS -60 V VGS=0V, ID=-250µA 2
Drain to Source Leakage Current IDSS -1 µA VDS=-60V, VGS=0V 2
Gate to Source Forward Leakage IGSS(F) -100 nA VGS=-20V, VDS=0V 2
Gate to Source Reverse Leakage IGSS(R) 100 nA VGS=+20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -2.4 -2 -1.6 V VDS=VGS, ID=-250µA 2
Drain-to-Source On-Resistance RDS(ON) 5.5 7 mΩ VGS=-10V, ID=-15A 2
Gate resistance RG 2 Ω VGS=0V, VDS=0V, f=1MHz 2
Input Capacitance Ciss 5403 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Output Capacitance Coss 941 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 48 pF VGS=0V, VDS=-30V, f=1.0MHz 2
Gate to Source Charge Qgs 15 nC VGS=-10V, VDS=-30V, ID=-15A 2
Gate to Drain Charge Qgd 11 nC VGS=-10V, VDS=-30V, ID=-15A 2
Turn-Off Delay Time td(OFF) 72 ns VDD=-30V, ID=-15A, VGS=-10V, RG=3.0Ω 2
Diode Forward Current IS -100 A TC=25 °C 2
Diode Pulse Current ISM -400 A 2
Diode Forward Voltage VSD -1.2 V IS=-15A, VGS=0V 2

CAD (KiCad official)

  • Symbol: LWS6008A4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: lws6008a4-etched.step / lws6008a4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lws6008a4.step / lws6008a4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Lewa Micro datasheet (10 pp, sha256 599818e013293f65, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF