component
LWS1H6AM
Public Made by Adomby adom
Lewa Micro MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLWS1H6AM
Lewa Micro · MOSFETs · SOT-23
LWS1H6AM from Lewa Micro, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V, threshold VGS(th) -1.2 V min and -1.7 V max (typical -2.2 V at ID=-250µA). |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -0.7 A at TA=25℃ and body diode forward current is -0.7 A. |
| 3 | D | passive | Drain; drain-to-source voltage rated -100 V, continuous current -0.7 A at TA=25℃, pulsed -2.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -100 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -0.7 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -0.4 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -2.8 | A | a1: repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | VDSS | -100 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | μA | VDS=-100V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.2 | -1.7 | V | VDS=VGS, ID=-250µA | 2 | |
| Drain-to-Source On-Resistance (VGS=-10V) | RDS(ON)1 | 800 | 900 | mΩ | VGS=-10V, ID=-0.5A | 2 | |
| Drain-to-Source On-Resistance (VGS=-4.5V) | RDS(ON)2 | 900 | 1100 | mΩ | VGS=-4.5V, ID=-0.3A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-0.5A, VGS=0V | 2 | ||
| Diode Forward Current | IS | -0.7 | A | TA=25 °C | 2 |
CAD (KiCad official)
- Symbol:
LWS1H6AM - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lws1h6am-etched.step/lws1h6am-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws1h6am.step/lws1h6am.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
8f8bb0b82853fd44, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).