component
LWN1H5290A4
Public Made by Adomby adom
Lewa Micro MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLWN1H5290A4
Lewa Micro · MOSFETs · TO-252
LWN1H5290A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20 V maximum with a threshold voltage of 1.4 V min to 2.4 V max at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated at 150 V with continuous drain current of 10 A at TC=25℃ and 6.3 A at TC=100℃. |
| 3 | S | passive | Source; the body diode carries a continuous forward current of up to 10 A at TC=25℃ with a forward voltage of 1.2 V max at IS=5.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 150 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 6.3 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 30 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 4.16 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 65 | ℃/W | Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4, 6 cm2 one-layer 70 µm copper drain area | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 150 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=150V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.4 | 1.9 | 2.4 | V | VDS=VGS, ID=250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | 240 | 290 | mΩ | VGS=10V, ID=5.0A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=5.0A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
LWN1H5290A4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lwn1h5290a4-etched.step/lwn1h5290a4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lwn1h5290a4.step/lwn1h5290a4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
722b5a7cd710c053, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).