component
LV2862YDDCR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1mo ago |
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| lv2862yddcr-etched.glb | 1mo ago |
| lv2862yddcr-etched.step | 1mo ago |
| lv2862yddcr.glb | 1mo ago |
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| page.json | 25d ago |
| README.md | 25d ago |
LV2862YDDCR
Texas Instruments · DC-DC Converters · SOT-23-6
LV2862YDDCR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CB | output | Bootstrap capacitor voltage node for high-side MOSFET gate bias; CB to SW voltage must remain between -0.3 V and 6 V. |
| 2 | GND | power_in | Ground connection providing reference potential for all voltage measurements and internal circuits. |
| 3 | FB | input | Feedback voltage input for closed-loop output regulation; external resistor divider sets VOUT = 0.765 V (1 + R1/R2); operating range 0 V to 5 V. |
| 4 | SHDN | input | Enable/disable input (high voltage tolerant) with internal pullup current source; pull below 1.25 V to disable device; operating range 0 V to 60 V. |
| 5 | VIN | power_in | Power input voltage pin; operating range 4 V to 60 V with 65 V transient withstand; supplies internal circuits and serves as drain node for internal high-side MOSFET. |
| 6 | SW | output | Switch node; output of high-side MOSFET connected to inductor, diode, and bootstrap capacitor; operating voltage range -1 V to 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-6 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating input voltage (VIN) | 4 | 60 | V | 5 | |||
| Shutdown supply current | 1 | 3 | µA | EN = 0 V | 5 | ||
| Rising SHDN threshold voltage | 1.05 | 1.25 | 1.38 | V | 5 | ||
| Feedback voltage (VFB) | VFB | 0.74 | 0.765 | 0.79 | V | 5 | |
| Switching frequency fSW (LV2862Y) | fSW | 1785 | 2100 | 2415 | kHz | 5 | |
| VIN input voltage (recommended) | VIN | 4 | 60 | V | 4 | ||
| CB pin voltage (recommended) | CB | 4 | 66 | V | 4 | ||
| CB to SW voltage (recommended) | CB to SW | -0.3 | 6 | V | 4 | ||
| SW voltage (recommended) | SW | -1 | 60 | V | 4 | ||
| FB voltage (recommended) | FB | 0 | 5 | V | 4 | ||
| SHDN control voltage (recommended) | SHDN | 0 | 60 | V | 4 | ||
| Operating junction temperature (recommended) | TJ | -40 | 125 | °C | 4 | ||
| VIN to GND | VIN | -0.3 | 65 | V | 4 | ||
| SHDN to GND | SHDN | -0.3 | 65 | V | 4 | ||
| FB to GND | FB | -0.3 | 7 | V | 4 | ||
| CB to SW | CB to SW | -0.3 | 7 | V | 4 | ||
| SW to GND | SW | -1 | 65 | V | 4 | ||
| SW to GND transient | SW | -2 | 65 | V | less than 30-ns transients | 4 | |
| Operating junction temperature (absolute maximum) | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature range | Tstg | -55 | 165 | °C | 4 | ||
| Undervoltage lockout threshold, rising | 4 | V | 5 | ||||
| Undervoltage lockout threshold, falling | 3 | V | 5 | ||||
| Quiescent current IQ (Eco-mode) | IQ | 28 | µA | Eco-mode, no load, VIN = 12 V, not switching | 5 | ||
| SHDN pin current | -4.2 | µA | SHDN = 2.3 V | 5 | |||
| SHDN pin current | -1 | µA | SHDN = 0.9 V | 5 | |||
| SHDN hysteresis current | -3 | µA | 5 | ||||
| High-side MOSFET on-resistance | 900 | mΩ | VIN = 12 V, CB to SW = 5.8 V | 5 | |||
| Minimum on-time tON-min | tON-min | 80 | ns | fSW = 2.1 MHz | 5 | ||
| Maximum duty cycle DMAX | DMAX | 96 | % | 5 | |||
| Peak current limit threshold | 1200 | mA | 5 | ||||
| Thermal shutdown trip point | TSHUTDOWN | 170 | ºC | 5 | |||
| Thermal shutdown hysteresis | Thys | 10 | ºC | 5 | |||
| Junction-to-ambient thermal resistance | RθJA | 102 | °C/W | JEDEC 3 in x 3 in 4-layer PCB, still air | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 36.9 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 28.4 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
LV2862YDDCR - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
lv2862yddcr-etched.step/lv2862yddcr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lv2862yddcr.step/lv2862yddcr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (25 pp, sha256
a3cd442854a6e23d, retrieved 2026-09-26, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).