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LTV816D-S

Public Made by Adom

by adom

UMW Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LTV816D-S

UMW · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm

LTV816D-S from UMW, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive LED anode of the GaAs input emitter, with the input forward current limited to 60 mA DC and 1 A peak (1 µs pulse) per the absolute maximum ratings.
2 Cathode passive LED cathode of the GaAs input emitter, with the reverse voltage rated at 6 V maximum.
3 Emitter passive Emitter of the NPN output transistor, with the emitter-collector voltage rated at 6 V maximum and collector-emitter voltage at 80 V maximum.
4 Collector passive Collector of the NPN output transistor, with collector current limited to 50 mA and collector power dissipation to 150 mW.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-4-2.54mm
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCEO 80 V IC=0.1mA, IF=0mA 3
Emitter-collector breakdown voltage BVECO 6 V IE=0.1mA, IF=0mA 3
Current Conversion Ratio CTR 50 600 % IF=5mA, VCE=5V 3
Collector current IC 2.5 mA IF=5mA, VCE=5V 3
Collector-emitter saturation voltage VCE(sat) 0.1 0.2 V IF=20mA, IC=1mA 3
Forward voltage VF 1.2 1.4 V IF=20mA 3
Reverse current IR 10 µA VR=4V 3
Collector to emitter current ICEO 100 nA VCE=20V, IF=0mA 3
Capacitance (Cf) Cf 0.6 1 pF V=0, f=1MHz 3
Risetime tr 4 18 µs VCE=10V, IC=2mA, RL=100Ω 3
Descend time (falltime) tf 3 18 µs VCE=10V, IC=2mA, RL=100Ω 3
Collector capacitance Ct 30 pF V=0, f=1KHz 3
Transforming frequency FC 80 kHz VCE=5V, IC=2mA, RL=100Ω, -3dB 3
Forward current IF 60 mA 2
Peak forward current IFP 1 A 1us pulse 2
Reverse voltage VR 6 V 2
Consume power (input) P 100 mW 2
Collector and emitter voltage VCEO 80 V 2
Emitter and collector voltage VECO 6 V 2
Collector current IC 50 mA 2
Collector consume power PC 150 mW 2
Total consume power PTOT 200 mW 2
Insulation voltage VISO 5000 Vrms AC test, 1 minute, humidity 40~60% 2
Max insulation voltage VIOTM 10000 V 2
Rated impulse insulation voltage VIORM 630 V 2
Working temperature TOPR -55 110 °C 2
Storage (deposit) temperature TSTG -55 125 °C 2
Soldering temperature TSOL 260 °C 10 seconds 2

CAD (KiCad official)

  • Symbol: LTV816D-S
  • Footprint: Package_SO:SOP-4_3.8x4.1mm_P2.54mm
  • 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
  • 3D model files: ltv816d-s-etched.step / ltv816d-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ltv816d-s.step / ltv816d-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (13 pp, sha256 af0e1295ed4f8fe5, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF