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LTV-817M-B
Public Made by Adomby adom
Lite On Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLTV-817M-B
Lite On · Transistor, Photovoltaic Output Optoisolators · DIP-4
LTV-817M-B from Lite On, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Anode of the input infrared LED; forward current max 50 mA, forward voltage typ 1.2 V at IF=20 mA. |
| 2 | Cathode | passive | Cathode of the input infrared LED; reverse voltage max 6 V. |
| 3 | Emitter | passive | Emitter of the output phototransistor; emitter-collector voltage max 6 V. |
| 4 | Collector | passive | Collector of the output phototransistor; collector-emitter voltage max 35 V and collector current max 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lite On |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Current Transfer Ratio (CTR rank B) | CTR | 130 | 260 | % | IF=5mA, VCE=5V, Ta=25oC | 11 | |
| Collector Current | IC | 2.5 | 30 | mA | IF=5mA, VCE=5V | 10 | |
| Forward Voltage | VF | 1.2 | 1.4 | V | IF=20mA | 10 | |
| Reverse Current | IR | 10 | A | VR=4V | 10 | ||
| Terminal Capacitance | Ct | 30 | 250 | pF | V=0, f=1KHz | 10 | |
| Collector Dark Current | ICEO | 100 | nA | VCE=20V, IF=0 | 10 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 35 | V | IC=0.1mA, IF=0 | 10 | ||
| Emitter-Collector Breakdown Voltage | BVECO | 6 | V | IE=10A, IF=0 | 10 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 10 | |
| Floating Capacitance | Cf | 0.6 | 1 | pF | V=0, f=1MHz | 10 | |
| Response Time (Rise) | tr | 4 | 18 | s | VCE=2V, IC=2mA, RL=100 | 10 | |
| Response Time (Fall) | tf | 3 | 18 | s | VCE=2V, IC=2mA, RL=100 | 10 | |
| Forward Current | IF | 50 | mA | Ta=25°C | 9 | ||
| Reverse Voltage | VR | 6 | V | Ta=25°C | 9 | ||
| Power Dissipation | P | 70 | mW | Ta=25°C | 9 | ||
| Peak Forward Current | IFP | 1 | A | 100μs pulse, 100Hz frequency | 9 | ||
| Collector-Emitter Voltage | VCEO | 35 | V | Ta=25°C | 9 | ||
| Emitter-Collector Voltage | VECO | 6 | V | Ta=25°C | 9 | ||
| Collector Current | IC | 50 | mA | Ta=25°C | 9 | ||
| Collector Power Dissipation | PC | 150 | mW | Ta=25°C | 9 | ||
| Total Power Dissipation | Ptot | 200 | mW | Ta=25°C | 9 | ||
| Isolation Voltage | Viso | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | 9 | ||
| Operating Temperature (LTV-817) | Topr | -50 | 110 | oC | 9 | ||
| Storage Temperature | Tstg | -55 | 125 | oC | 9 | ||
| Soldering Temperature | Tsol | 260 | oC | 9 | |||
| Thermal Resistance Junction-Ambient | RthJ-A | 325 | oC/W | 9 | |||
| Thermal Resistance Junction-Case | RthJ-C | 200 | oC/W | 9 |
CAD (KiCad official)
- Symbol:
LTV-817M-B - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
ltv-817m-b-etched.step/ltv-817m-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ltv-817m-b.step/ltv-817m-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lite On datasheet (17 pp, sha256
08d343c30dbd0278, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).