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LTV-817-D

Public Made by Adom

by adom

Lite On Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LTV-817-D

Lite On · Transistor, Photovoltaic Output Optoisolators · DIP-4

LTV-817-D from Lite On, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive LED anode of the input side; forward current IF max 50 mA, forward voltage 1.2 V typ (1.4 V max) at IF=20 mA, peak forward current 1 A.
2 Cathode passive LED cathode of the input side; reverse voltage VR max 6 V.
3 Emitter passive Phototransistor emitter of the output side; emitter-collector voltage VECO max 6 V.
4 Collector passive Phototransistor collector of the output side; collector-emitter voltage VCEO max 35 V, collector current IC max 50 mA.

Key specifications

Parameter Value
Manufacturer Lite On
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Current IF 50 mA 9
Reverse Voltage VR 6 V 9
Power Dissipation P 70 mW 9
Peak Forward Current IFP 1 A 100μs pulse, 100Hz frequency 9
Collector - Emitter Voltage VCEO 35 V 9
Emitter - Collector Voltage VECO 6 V 9
Collector Current IC 50 mA 9
Collector Power Dissipation PC 150 mW 9
Total Power Dissipation Ptot 200 mW 9
Isolation Voltage Viso 5000 Vrms AC for 1 minute, R.H. = 40 ~ 60% 9
Operating Temperature (LTV-817) Topr -55 110 °C LTV-817 variant (LTV-827/847 are -30 ~ +100 °C) 9
Storage Temperature Tstg -55 125 °C 9
Soldering Temperature Tsol 260 °C 9
Thermal Resistance Junction-Ambient RthJ-A 325 °C/W 9
Thermal Resistance Junction-Case RthJ-C 200 °C/W 9
Forward Voltage VF 1.2 1.4 V IF=20mA 10
Reverse Current IR 10 µA VR=4V 10
Terminal Capacitance Ct 30 250 pF V=0, f=1KHz 10
Collector Dark Current ICEO 100 nA VCE=20V, IF=0 10
Collector-Emitter Breakdown Voltage BVCEO 35 V IC=0.1mA, IF=0 10
Emitter-Collector Breakdown Voltage BVECO 6 V IE=10µA, IF=0 10
Collector Current IC 2.5 30 mA IF=5mA, VCE=5V 10
Current Transfer Ratio CTR 50 600 % IF=5mA, VCE=5V 10
Current Transfer Ratio, CTR Rank D CTR 300 600 % IF=5mA, VCE=5V, Ta=25oC 11
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IF=20mA, IC=1mA 10
Floating Capacitance Cf 0.6 1 pF V=0, f=1MHz 10
Response Time (Rise) tr 4 18 µs VCE=2V, IC=2mA, RL=100Ω 10
Response Time (Fall) tf 3 18 µs VCE=2V, IC=2mA, RL=100Ω 10

CAD (KiCad official)

  • Symbol: LTV-817-D
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: ltv-817-d-etched.step / ltv-817-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ltv-817-d.step / ltv-817-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Lite On datasheet (19 pp, sha256 5e44a7b5a48c3d41, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF