component
LTC4376HDHD#PBF
Public Made by Adomby adom
Analog Devices Pre-ordered Chips, DFN-16-EP(4x5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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LTC4376HDHD#PBF
Analog Devices · Pre-ordered Chips · DFN-16-EP(4x5)
LTC4376HDHD#PBF from Analog Devices, in a DFN-16-EP(4x5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 2 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 3 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 4 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 5 | SHDN | input | Shutdown control input that enters low current mode when pulled below 0.6V and turns the part on above 2V, tolerating up to 40V or 40V below VSS; connect to IN if unused. |
| 6 | NC | unconnected | No connection, not internally connected. |
| 7 | INK | power_in | Voltage sense and supply input (4V to 40V operating range) used to control the MOSFET voltage drop, connected to IN. |
| 8 | CS | passive | Gate drive return through which the fast pull-down current flows during a reverse current event; connect to IN or leave open. |
| 9 | GATE | output | Gate drive output that enhances the MOSFET above 30mV of drop and pulls down to CS within 300ns on reverse current; connect to the external MOSFET gate in a back-to-back configuration, otherwise leave open. |
| 10 | OUTK | input | Drain voltage sense input used to control the MOSFET voltage drop, connected to OUT. |
| 11 | VSS | power_in | Device ground. |
| 12 | NC | unconnected | No connection, not internally connected. |
| 13 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 14 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 15 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 16 | IN | passive | Source of the internal N-channel MOSFET and anode of the ideal diode, protected against reverse inputs down to -40V. |
| 17 | OUT | passive | Exposed pad that is the drain of the internal N-channel MOSFET and the cathode of the ideal diode, serving as the common output when multiple LTC4376s are diode-ORed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | DFN-16-EP(4x5) |
| Category | Interface ICs |
| Pins | 17 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Supply Range | VINK | 4 | 40 | V | 3 | ||
| Source-Drain Regulation Voltage (VINK - VOUTK) | ∆VSD(REG) | 20 | 30 | 45 | mV | 1mA < IIN < 100mA | 3 |
| Body Diode Forward Voltage Drop (VIN - VOUT) | ∆VSD(FWD) | 0.55 | 0.77 | 1 | V | IIN = 7A, MOSFET Off | 3 |
| Internal N-Channel MOSFET On Resistance | RDS(ON) | 15 | 30 | mΩ | IIN = 7A | 3 | |
| Peak Avalanche Current | IAS | 40 | A | L = 0.1mH (Note 5) | 3 | ||
| Gate Pull-Up Current | IGATE(UP) | -6 | -10 | -17 | µA | GATE = INK, ∆VSD = 0.1V | 3 |
| Gate Pull-Down Current | IGATE(DOWN) | 70 | 130 | 180 | mA | Fault Condition, ∆VGATE = 5V, ∆VSD = -1V | 3 |
| Gate Turn-Off Delay Time | tOFF | 0.3 | 0.5 | µs | ∆VSD = 0.1V to -1V, ∆VGATE < 2V | 3 | |
| SHDN Pin Input Threshold | VSHDN(TH) | 0.6 | 1.2 | 2 | V | INK = 4V to 40V | 3 |
| SHDN Pin Float Voltage | VSHDN(FLT) | 0.6 | 1.75 | 2.5 | V | INK = 4V to 40V | 3 |
| Reverse CS Threshold for GATE Off | VCS(TH) | -0.9 | -1.8 | -2.7 | V | GATE = 0V, IGATE(DOWN) = 1mA | 3 |
| SHDN Leakage Current | ILEAK | 1 | µA | SHDN = 2.6V | 3 | ||
| OUT Reverse Leakage Current | IOUT | 150 | µA | IN = GATE = 0V, OUT = 40V | 3 | ||
| IN, INK, CS, SHDN voltage | -40 | 80 | V | 2 | |||
| OUT, OUTK voltage | -0.3 | 80 | V | 2 | |||
| INK-OUTK voltage | -45 | 100 | V | 2 | |||
| INK-CS voltage | -1 | 80 | V | 2 | |||
| IN-OUT voltage | -45 | 0.3 | V | Note 3 | 2 | ||
| Operating Junction Temperature Range | -40 | 125 | °C | LTC4376H | 2 | ||
| Storage Temperature Range | -65 | 150 | °C | 2 | |||
| Maximum Junction Temperature | TJMAX | 150 | °C | 2 | |||
| Junction-to-Ambient Thermal Resistance | θJA | 43 | °C/W | 2 | |||
| Junction-to-Case Thermal Resistance | θJC | 4.3 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
LTC4376HDHD#PBF - Footprint:
Package_DFN_QFN:DFN-16-1EP_4x5mm_P0.5mm_EP2.44x4.34mm - 3D model: DFN-16-EP(4x5) (KiCad packages3D, STEP)
- 3D model files:
ltc4376hdhd-pbf-etched.step/ltc4376hdhd-pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ltc4376hdhd-pbf.step/ltc4376hdhd-pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Analog Devices datasheet (18 pp, sha256
c9f4f4eb0fe9eba1, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).