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LTC4359IMS8#TRPBF

Analog Devices · Power Distribution Switches · MSOP-8

LTC4359IMS8#TRPBF from Analog Devices, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE output Gate drive output that enhances the external N-channel MOSFET when load current creates more than 30mV across it, and pulls GATE to SOURCE within 0.3µs during reverse current to turn the MOSFET off.
2 SOURCE input Source connection that is the return path of the gate fast pull-down and should be connected as close as possible to the source of the external N-channel MOSFET.
3 NC unconnected No connection; not internally connected.
4 IN power_in Voltage sense and supply voltage; IN is the anode of the ideal diode and its sensed voltage controls the MOSFET gate.
5 SHDN input Shutdown control input that shuts the part down to a low current mode when pulled below 0.6V, enables it when pulled above 2V or left open (internal 2.6µA pull-up), and can be pulled up to 100V or down to -40V with respect to VSS without damage.
6 VSS power_in Supply voltage return and device ground.
7 NC unconnected No connection; not internally connected.
8 OUT power_out Drain voltage sense and cathode of the ideal diode; connects directly or through a 2k resistor to the MOSFET drain and is the common output for ideal diode-OR configurations.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package MSOP-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Supply Range VIN 4 80 V 3
Source-Drain Regulation Voltage (IN-OUT) ∆VSD 20 30 45 mV ∆VGATE = 2.5V 3
Gate Pull-Up Current IGATE(UP) -6 -10 -14 µA GATE = IN, ∆VSD = 0.1V 3
Gate Pull-Down Current (fault) IGATE(DOWN) 70 130 180 mA Fault Condition, ∆VGATE = 5V, ∆VSD = −1V 3
Gate Turn-Off Delay Time tOFF 0.3 0.5 µs ∆VSD = 0.1V to −1V, ∆VGATE < 2V, CGATE = 0pF 3
SHDN Pin Input Threshold VSHDN(TH) 0.6 1.2 2 V IN = 4V to 80V 3
SHDN Pin Float Voltage VSHDN(FLT) 0.6 1.75 2.5 V IN = 4V to 80V 3
Reverse SOURCE Threshold for GATE Off VSOURCE(TH) -0.9 -1.8 -2.7 V GATE = 0V, IGATE(DOWN) = 1mA 3
Gate Drive (GATE-SOURCE), IN = 4V ∆VGATE 4.5 5.5 V IN = 4V, IGATE = 0, −1µA 3
Gate Drive (GATE-SOURCE), IN = 8V to 80V ∆VGATE 10 12 15 V IN = 8V to 80V; IGATE = 0, -1µA 3
IN Current in Regulation IIN 0 150 200 µA IN = 12V 3
IN Current in Shutdown IIN 9 15 µA IN = OUT = 12V, SHDN = 0V 3
IN Current in Shutdown IIN 20 30 µA IN = OUT = 24V, SHDN = 0V 3
Operating Ambient Temperature Range (LTC4359I) TA -40 85 °C LTC4359I 2
IN, SOURCE, SHDN Voltage -40 100 V 2
OUT Voltage -2 100 V Note 3 2
IN, OUT Voltage -100 100 V 2
IN, SOURCE Voltage -1 80 V 2
GATE, SOURCE Voltage -0.3 10 V Note 4 2
Storage Temperature Range -65 150 °C 2
Maximum Junction Temperature TJMAX 150 °C MS8 package 2
Thermal Resistance, Junction to Ambient θJA 163 °C/W MS8 package 2

CAD (KiCad official)

  • Symbol: LTC4359IMS8#TRPBF
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ltc4359ims8-trpbf-etched.step / ltc4359ims8-trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ltc4359ims8-trpbf.step / ltc4359ims8-trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (20 pp, sha256 b0ace12fdfe544ff, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF