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LSF65R380HT

Public Made by Adom

by adom

LONTEN MOSFETs, TO-262-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LSF65R380HT

LONTEN · MOSFETs · TO-262-3

LSF65R380HT from LONTEN, in a TO-262-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V (VGSS), with threshold of 2.5 V min to 4.5 V max at ID=0.25 mA.
2 D passive Drain; drain-source voltage 650 V (VDSS), continuous drain current 11 A at TC=25°C, pulsed 30 A.
3 S passive Source; continuous body-diode forward current 11 A and pulsed 30 A.

Key specifications

Parameter Value
Manufacturer LONTEN
Package TO-262-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 650 V 1
Continuous drain current ID 11 A TC = 25°C 1
Continuous drain current ID 8.2 A TC = 100°C 1
Pulsed drain current IDM 30 A Note 1 1
Gate-source voltage VGSS -30 30 V 1
Avalanche energy, single pulse EAS 245 mJ Note 2 1
Avalanche current, repetitive IAR 11 A Note 3 1
Power dissipation TO-220/TO-252/TO-262/TO-263 PD 90 W TC = 25°C 1
Power dissipation derating above 25°C PD 0.72 W/°C Derate above 25°C 1
Operating and storage temperature range TJ, TSTG -55 150 °C 1
Continuous diode forward current IS 11 A 1
Diode pulse current IS,pulse 30 A 1
Thermal resistance, junction-to-case RθJC 1.39 °C/W TO-252/TO-220/TO-262/TO-263 2
Thermal resistance, junction-to-ambient RθJA 45 °C/W TO-252/TO-220/TO-262/TO-263 2
Soldering temperature Tsold 260 °C Wave soldering at leads, 1.6 mm from case for 10 s 2
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=0.25 mA 2
Gate threshold voltage VGS(th) 2.5 3.5 4.5 V VDS=VGS, ID=0.25 mA 2
Drain cut-off current IDSS 10 μA VDS=650 V, VGS=0 V, Tj=25°C 2
Gate leakage current, forward IGSSF 100 nA VGS=30 V, VDS=0 V 2
Gate leakage current, reverse IGSSR -100 nA VGS=-30 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 0.33 0.38 Ω VGS=10 V, ID=5.5 A, Tj=25°C 2
Drain cut-off current IDSS 1 μA VDS=650 V, VGS=0 V, Tj=125°C 2
Drain-source on-state resistance RDS(on) 0.9 Ω VGS=10 V, ID=5.5 A, Tj=150°C 2
Gate resistance RG 5.7 Ω f=1 MHz, open drain 2
Input capacitance Ciss 560 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 216 pF 2
Reverse transfer capacitance Crss 1.2 pF 2
Turn-on delay time td(on) 20.6 ns VDD = 400 V, ID = 5.5 A, RG = 10 Ω, VGS = 15 V 2
Rise time tr 32 ns 2
Turn-off delay time td(off) 62 ns 2
Fall time tf 12.5 ns 3
Gate to source charge Qgs 4.8 nC VDD = 400 V, ID = 5.5 A, VGS = 0 to 10 V 3
Gate to drain charge Qgd 4.7 nC 3
Gate charge total Qg 14.7 nC 3
Gate plateau voltage Vplateau 6 V 3
Diode forward voltage VSD 1.2 V VGS = 0 V, IF = 5.5 A 3
Reverse recovery time trr 234 ns VR = 400 V, IF = 5.5 A, dIF/dt = 100 A/μs 3
Reverse recovery charge Qrr 4.4 μC 3
Peak reverse recovery current Irrm 18.7 A 3

CAD (KiCad official)

  • Symbol: LSF65R380HT
  • Footprint: Package_TO_SOT_THT:TO-262-3_Vertical
  • 3D model: TO-262-3 (KiCad packages3D, STEP)
  • 3D model files: lsf65r380ht-etched.step / lsf65r380ht-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lsf65r380ht.step / lsf65r380ht.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LONTEN datasheet (12 pp, sha256 bdf5ac1f1d9683dc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF