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Contents

README

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LP5912Q1.8DRVTQ1

Texas Instruments · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · WSON-6-EP(2x2)

LP5912Q1.8DRVTQ1 from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Regulated output voltage, fixed from 0.8 V to 5.5 V in 25-mV steps per the voltage options.
2 NC unconnected No internal connection; leave open or connect to ground.
3 PG output Power-good indicator output that requires an external pullup.
4 EN input Enable input: logic high turns the device on and logic low turns it off, with an internal 3-MΩ pulldown.
5 GND power_in Ground reference pin for the device.
6 IN power_in Unregulated input voltage supply to the regulator.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-6-EP(2x2)
Category Power Management (PMIC)
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage tolerance ΔVOUT -3 3 % For 1.1 V ≤ VOUT(NOM) < 3.3 V: VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V, IOUT = 1 mA to 500 mA 5
Input supply voltage VIN 1.6 6.5 V 4
Output voltage VOUT 0.8 5.5 V 4
Enable input voltage VEN 0 V max is VIN 4
PG pin OFF voltage VPG 0 6.5 V 4
Output current IOUT 0 500 mA 4
Operating junction temperature TJ-MAX-OP -40 125 °C 4
Input voltage VIN -0.3 7 V 4
Output voltage VOUT -0.3 7 V 4
Enable input voltage VEN -0.3 7 V 4
Power Good (PG) pin OFF voltage VPG -0.3 7 V 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
Line regulation 0.8 %/V VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V (VOUT(NOM) ≥ 1.1 V) 5
Load regulation 0.0022 %/mA IOUT = 1 mA to 500 mA 5
Short-circuit current limit ISC 700 900 1100 mA TJ = 25°C 5
Reverse leakage current IRO 10 150 µA VIN < VOUT 5
Quiescent current IQ 30 55 µA VEN = 1.3 V, IOUT = 0 mA 5
Quiescent current IQ 400 600 µA VEN = 1.3 V, IOUT = 500 mA 5
Quiescent current, shutdown mode IQ(SD) 0.2 1.5 µA VEN = 0 V, -40°C ≤ TJ ≤ 85°C 5
Quiescent current, shutdown mode IQ(SD) 0.2 5 µA VEN = 0 V 5
Ground current IG 35 µA VEN = 1.3 V, IOUT = 0 mA 5
Dropout voltage VDO 170 250 mV IOUT = 500 mA, 1.6 V ≤ VOUT(NOM) < 3.3 V 5
Power Supply Rejection Ratio PSRR 80 dB f = 100 Hz, VOUT ≥ 1.1 V, IOUT = 20 mA 6
Power Supply Rejection Ratio PSRR 75 dB f = 1 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 6
Power Supply Rejection Ratio PSRR 65 dB f = 10 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 6
Power Supply Rejection Ratio PSRR 40 dB f = 100 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 6
Noise voltage eN 12 µVRMS IOUT = 1 mA, BW = 10 Hz to 100 kHz 6
Thermal shutdown temperature TSD 160 °C 6
Thermal shutdown hysteresis THYS 15 °C 6
OFF threshold VEN(OFF) 0.3 V VIN = 1.6 V to 6.5 V, VEN falling until device is disabled 6
ON threshold VEN(ON) 1.3 V 1.6 V ≤ VIN ≤ 6.5 V, VEN rising until device is enabled 6
Input current at EN pin IEN 2.5 µA VEN = 6.5 V, VIN = 6.5 V 6
PG high threshold (% of nominal VOUT) PGHTH 94 % 6
PG low threshold (% of nominal VOUT) PGLTH 90 % 6
PG pin low-level output voltage VOL(PG) 100 mV VOUT < PGLTH, sink current = 1 mA 6
PG pin leakage current IlKG(PG) 1 µA VOUT < PGHTH, VPG = 6.5 V 6
PG delay time tPGD 140 µs Time from VOUT > PG threshold to PG toggling 6
Line transients (VIN rising) ΔVOUT 1 mV VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1.1 V), VIN trise = 30 µs 7
Line transients (VIN falling) ΔVOUT -1 mV VIN = (VOUT(NOM) + 1.1 V) to (VOUT(NOM) + 0.5 V), VIN tfall = 30 µs 7
Load transients (IOUT rising) ΔVOUT -45 mV IOUT = 5 mA to 500 mA, IOUT trise = 10 µs 7
Load transients (IOUT falling) ΔVOUT 45 mV IOUT = 500 mA to 5 mA, IOUT tfall = 10 µs 7
Overshoot on start-up 5 % Stated as a percentage of VOUT(NOM) 7
Turnon time tON 200 µs From VEN > VEN(ON) to VOUT = 95% of VOUT(NOM) 7
Output discharge pulldown resistance RAD 100 Ω VEN = 0 V, VIN = 3.6 V 7
Input capacitance CIN 0.7 1 µF Capacitance for stability 7
Output capacitance COUT 0.7 1 10 µF 7
Output ESR ESR 5 500 mΩ 7
Junction-to-ambient thermal resistance, High-K RθJA 71.2 °C/W High-K PCB per JESD51-7 4
Junction-to-case (top) thermal resistance RθJC(top) 93.7 °C/W 4
Junction-to-board thermal resistance RθJB 40.7 °C/W 4
Junction-to-top characterization parameter ψJT 2.5 °C/W 4
Junction-to-board characterization parameter ψJB 41.1 °C/W 4
Junction-to-case (bottom) thermal resistance ψJC(bot) 11.2 °C/W 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper ground pin using as wide and as short of a copper trace as is practical. 24

CAD (KiCad official)

  • Symbol: LP5912Q1.8DRVTQ1
  • Footprint: Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: lp5912q1-8drvtq1-etched.step / lp5912q1-8drvtq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lp5912q1-8drvtq1.step / lp5912q1-8drvtq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (35 pp, sha256 34118b388e5edb0e, retrieved 2026-11-06, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF