component
LP2307LT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LP2307LT1G
LRC · MOSFETs · SOT-23
LP2307LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage is ±8 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; drain-source voltage is rated at -16 V maximum. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -4.7 A at TA=25℃ and total power dissipation is 0.7 W at TA=25℃ (1.1 W per the datasheet's PD row, see notes). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -16 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-4.5V, ID=-4.7A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=-2.7V, ID=-3.8A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 110 | mΩ | VGS=-2.5V, ID=-1.0A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.4 | V | VDS=VGS, ID=-250uA | 2 | ||
| Forward Transconductance | gfs | 8 | S | VDS=-10V, ID=-4.7A | 2 | ||
| Drain-Source Leakage Current (Tj=25°C) | IDSS | -1 | uA | VDS=-16V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS=±8V | 2 | |
| Total Gate Charge | Qg | 24 | 36 | nC | ID=-4.7A | 2 | |
| Turn-on Delay Time | td(on) | 22 | 35 | ns | VDS=-10V | 2 | |
| Input Capacitance | Ciss | 985 | 1580 | pF | VGS=0V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1.7A, VGS=0V | 2 | ||
| Max Diode Forward Current | IS | -1.7 | A | 2 | |||
| Drain-Source Voltage | VDS | -16 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current (TA=25℃) | ID@TA=25℃ | -4.7 | A | 1 | |||
| Continuous Drain Current (TA=70℃) | ID@TA=70℃ | -3.3 | A | 1 | |||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Total Power Dissipation (TA=25℃) | PD@TA=25℃ | 1.1 | W | 1 | |||
| Total Power Dissipation (TA=70℃) | PD@TA=70℃ | 0.7 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | Rthj-a | 110 | ℃/W | Surface mounted on 1 in² copper pad of FR4 board (note 3) | 1 | ||
| Gate-Source Charge | Qgs | 18 | nC | VDS=-10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 2.7 | nC | VGS=-4.5V | 2 | ||
| Turn-off Delay Time | td(off) | 45 | ns | RG=6Ω, VGS=-4.5V | 2 | ||
| Fall Time | tf | 25 | ns | RD=10Ω | 2 | ||
| Output Capacitance | Coss | 180 | pF | VDS=-15V | 2 | ||
| Reverse Transfer Capacitance | Crss | 160 | pF | f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
LP2307LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lp2307lt1g-etched.step/lp2307lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lp2307lt1g.step/lp2307lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
f9ca348ae3b28696, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LP2307LT1G
**LRC** · MOSFETs · SOT-23
LP2307LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage is ±8 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; drain-source voltage is rated at -16 V maximum. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -4.7 A at TA=25℃ and total power dissipation is 0.7 W at TA=25℃ (1.1 W per the datasheet's PD row, see notes). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -16 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 70 | mΩ | VGS=-4.5V, ID=-4.7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 100 | mΩ | VGS=-2.7V, ID=-3.8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 110 | mΩ | VGS=-2.5V, ID=-1.0A | 2 |
| Gate Threshold Voltage | VGS(th) | | | -1.4 | V | VDS=VGS, ID=-250uA | 2 |
| Forward Transconductance | gfs | 8 | | | S | VDS=-10V, ID=-4.7A | 2 |
| Drain-Source Leakage Current (Tj=25°C) | IDSS | | | -1 | uA | VDS=-16V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS=±8V | 2 |
| Total Gate Charge | Qg | | 24 | 36 | nC | ID=-4.7A | 2 |
| Turn-on Delay Time | td(on) | | 22 | 35 | ns | VDS=-10V | 2 |
| Input Capacitance | Ciss | | 985 | 1580 | pF | VGS=0V | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS=-1.7A, VGS=0V | 2 |
| Max Diode Forward Current | IS | | | -1.7 | A | | 2 |
| Drain-Source Voltage | VDS | | | -16 | V | | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current (TA=25℃) | ID@TA=25℃ | | | -4.7 | A | | 1 |
| Continuous Drain Current (TA=70℃) | ID@TA=70℃ | | | -3.3 | A | | 1 |
| Pulsed Drain Current | IDM | | | -20 | A | | 1 |
| Total Power Dissipation (TA=25℃) | PD@TA=25℃ | | | 1.1 | W | | 1 |
| Total Power Dissipation (TA=70℃) | PD@TA=70℃ | | | 0.7 | W | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | Rthj-a | | | 110 | ℃/W | Surface mounted on 1 in² copper pad of FR4 board (note 3) | 1 |
| Gate-Source Charge | Qgs | | 18 | | nC | VDS=-10V | 2 |
| Gate-Drain (Miller) Charge | Qgd | | 2.7 | | nC | VGS=-4.5V | 2 |
| Turn-off Delay Time | td(off) | | 45 | | ns | RG=6Ω, VGS=-4.5V | 2 |
| Fall Time | tf | | 25 | | ns | RD=10Ω | 2 |
| Output Capacitance | Coss | | 180 | | pF | VDS=-15V | 2 |
| Reverse Transfer Capacitance | Crss | | 160 | | pF | f=1.0MHz | 2 |
## CAD (KiCad official)
- Symbol: `LP2307LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lp2307lt1g-etched.step` / `lp2307lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lp2307lt1g.step` / `lp2307lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884488390238208) (4 pp, sha256 `f9ca348ae3b28696`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lp2307lt1g-datasheet.pdf)