component

LNE06R062

Public Made by Adom

by adom

LONTEN MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorslne06r062factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers lne06r062: viewers · Ray 17d ago
lne06r062-etched.glb Publish 0.1.0 · Ray 17d ago
lne06r062-etched.step lne06r062: factory component page (tier=lcsc) · Ray 17d ago
lne06r062-hero.glb lne06r062: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
lne06r062-hero.overlay.json Publish 0.1.0 · Ray 17d ago
lne06r062.glb Publish 0.1.0 · Ray 17d ago
lne06r062.kicad_mod Publish 0.1.0 · Ray 17d ago
lne06r062.kicad_sym Publish 0.1.0 · Ray 17d ago
lne06r062.lbr Publish 0.1.0 · Ray 17d ago
lne06r062.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

LNE06R062

LONTEN · MOSFETs · TO-263

LNE06R062 from LONTEN, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1.0 to 3.0 V.
2 D passive Drain, also connected to the package tab; VDSS is 60 V and continuous drain current is 120 A at TC = 25°C.
3 S passive Source; continuous source current IS is 120 A maximum.

Key specifications

Parameter Value
Manufacturer LONTEN
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage BVDSS 60 V VGS=0 V, ID=250uA 2
Gate threshold voltage VGS(th) 1 3 V VDS=VGS, ID=250uA 2
Drain-source leakage current IDSS 1 μA VDS=60 V, VGS=0 V, TJ = 25°C 2
Drain-source leakage current IDSS 5 μA VDS=60 V, VGS=0 V, TJ = 125°C 2
Gate leakage current, Forward IGSSF 100 nA VGS=20 V, VDS=0 V 2
Gate leakage current, Reverse IGSSR -100 nA VGS=-20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 4.5 6.2 mΩ VGS=10 V, ID=20 A 2
Drain-source on-state resistance RDS(on) 6.7 10 mΩ VGS=4.5 V, ID=10 A 2
Continuous Source Current IS 120 A 2
Pulsed Source Current ISM 480 A 2
Diode Forward Voltage VSD 0.95 1.4 V VGS=0V, IS=50A, TJ=25℃ 2
Drain-source voltage VDSS 60 V 1
Continuous drain current (TC = 25°C) ID 120 A TC = 25°C 1
Continuous drain current (TC = 100°C) ID 87 A TC = 100°C 1
Pulsed drain current IDM 480 A 1
Gate-Source voltage VGSS -20 20 V 1
Avalanche energy EAS 320 mJ 1
Power Dissipation (TO-220/TO-263) PD 120 W TC = 25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance, Junction-to-Case (TO-220/TO-263) RθJC 1 °C/W 1
Thermal Resistance, Junction-to-Ambient (TO-220/TO-263) RθJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: LNE06R062
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: lne06r062-etched.step / lne06r062-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lne06r062.step / lne06r062.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LONTEN datasheet (9 pp, sha256 61b360ba4282d18b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF