component
LNBTVS4-222S
Public Made by Adomby adom
STMicroelectronics TVS, SMC. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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LNBTVS4-222S
STMicroelectronics · TVS · SMC
LNBTVS4-222S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak reverse current at VRM, 25 °C | IRM | 0.2 | µA | @ VRM, 25 °C | 3 | ||
| Peak reverse current at VRM, 85 °C | IRM | 1 | µA | @ VRM, 85 °C | 3 | ||
| Breakdown voltage | VBR | 22 | 23.1 | 24.2 | V | @ IR = 1 mA | 3 |
| Clamping voltage, 10/1000 µs | VCL | 33.2 | V | @ IPP, 10/1000 µs | 3 | ||
| Peak pulse current, 10/1000 µs column | IPP | 90 | A | 10/1000 µs | 3 | ||
| Clamping voltage, 8/20 µs | VCL | 30 | V | @ IPP, 8/20 µs, IEC 61000-4-5 | 3 | ||
| Peak pulse current, 8/20 µs | IPP | 334 | A | 8/20 µs, IEC 61000-4-5; surge capability given for both directions | 3 | ||
| Peak pulse power dissipation | PPP | 22.5 | kW | 8/20 µs, Tj initial = Tamb | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 2 | ||
| Stand-off voltage | VRM | 20 | V | 3 | |||
| Voltage temperature coefficient | αT | 9.3 | 10-4/°C | VBR temperature coefficient, see note 1 | 3 | ||
| Capacitance | C | 6 | nF | 3 | |||
| Thermal resistance junction to leads, SMC | Rth(j-l) | 15 | °C/W | junction to leads, SMC package | 2 |
CAD (KiCad official)
- Symbol:
LNBTVS4-222S - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
lnbtvs4-222s-etched.step/lnbtvs4-222s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lnbtvs4-222s.step/lnbtvs4-222s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
50c1e5d4a43e2e42, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LNBTVS4-222S
**STMicroelectronics** · TVS · SMC
LNBTVS4-222S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak reverse current at VRM, 25 °C | IRM | | | 0.2 | µA | @ VRM, 25 °C | 3 |
| Peak reverse current at VRM, 85 °C | IRM | | | 1 | µA | @ VRM, 85 °C | 3 |
| Breakdown voltage | VBR | 22 | 23.1 | 24.2 | V | @ IR = 1 mA | 3 |
| Clamping voltage, 10/1000 µs | VCL | | | 33.2 | V | @ IPP, 10/1000 µs | 3 |
| Peak pulse current, 10/1000 µs column | IPP | | | 90 | A | 10/1000 µs | 3 |
| Clamping voltage, 8/20 µs | VCL | | | 30 | V | @ IPP, 8/20 µs, IEC 61000-4-5 | 3 |
| Peak pulse current, 8/20 µs | IPP | | | 334 | A | 8/20 µs, IEC 61000-4-5; surge capability given for both directions | 3 |
| Peak pulse power dissipation | PPP | | | 22.5 | kW | 8/20 µs, Tj initial = Tamb | 2 |
| Storage temperature range | Tstg | -65 | | 150 | °C | | 2 |
| Operating junction temperature range | Tj | -55 | | 150 | °C | | 2 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10 s | 2 |
| Stand-off voltage | VRM | | 20 | | V | | 3 |
| Voltage temperature coefficient | αT | | 9.3 | | 10-4/°C | VBR temperature coefficient, see note 1 | 3 |
| Capacitance | C | | 6 | | nF | | 3 |
| Thermal resistance junction to leads, SMC | Rth(j-l) | | 15 | | °C/W | junction to leads, SMC package | 2 |
## CAD (KiCad official)
- Symbol: `LNBTVS4-222S`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `lnbtvs4-222s-etched.step` / `lnbtvs4-222s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lnbtvs4-222s.step` / `lnbtvs4-222s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/lnbtvs4-222s.pdf) (13 pp, sha256 `50c1e5d4a43e2e42`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lnbtvs4-222s-datasheet.pdf)