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Ray Publish 0.1.0 e7114b2 17d ago

LN4501LT1G-HW

LRC · MOSFETs · SOT-23

LN4501LT1G-HW from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; rated VGS ±12 V maximum, with threshold VGS(th) 0.6 V min to 1.2 V max at ID = 250 µA and 2.5 V rated gate drive.
2 Source passive Source terminal of the N-channel MOSFET; continuous body-diode current IS is 1.6 A max and pulsed current ISM is 10 A max.
3 Drain passive Drain terminal of the N-channel MOSFET; VDSS is 20 V max, continuous ID is 3.2 A at TA = 25°C and pulsed IDM is 10 A.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-to-Source Voltage VGS -12 12 V Ta = 25°C 1
Continuous Drain Current (steady state) ID 3.2 A TA = 25°C, steady state (Note 1) 1
Continuous Drain Current (steady state) ID 2.4 A TA = 85°C, steady state (Note 1) 1
Steady State Power Dissipation PD 1.25 W Note 1 1
Pulsed Drain Current IDM 10 A tp = 10 μs 1
Operating and Storage Temperature Range TJ/Tstg -55 150 °C 1
Drain-Source Voltage VDSS 20 V Ta = 25°C 1
Thermal Resistance, Junction-to-Ambient RΘJA 100 ºC/W Note 1: surface mounted on 1.5 x 1.5 in FR4 board, 1 sq in pad, 2 oz Cu 1
Thermal Resistance, Junction-to-Ambient RΘJA 300 ºC/W Note 2: surface-mounted on FR4 board, minimum recommended pad size 1
Drain-Source Breakdown Voltage V(BR)DSS 20 24.5 V VGS = 0, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=16V, VGS=0V, TJ = 25°C; (VDS=16V, VGS=0V, TJ = 85°C also printed) 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate Threshold Voltage VGS(th) 0.4 0.8 1.2 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance (VGS = 4.5 V) RDS(on) 43 mΩ VGS = 4.5 V, ID = 3.6 A 2
Static Drain-Source On-State Resistance (VGS = 2.5 V) RDS(on) 65 mΩ VGS = 2.5 V, ID = 3.1 A 2
Total Gate Charge Qg 2.4 4.1 6 nC VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 2
Gate-Source Charge Qgs 0.35 0.6 1 nC VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 2
Gate-Drain Charge Qgd 0.7 1.3 2 nC VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 2
Input Capacitance Ciss 230 390 585 pF VGS = 0 V, f = 1.0MHz, VDS = 10 V 2
Output Capacitance Coss 31 52 78 pF VGS = 0 V, f = 1.0MHz, VDS = 10 V 2
Reverse Transfer Capacitance Crss 27 45 68 pF VGS = 0 V, f = 1.0MHz, VDS = 10 V 2
Gate-Resistance Rg 4.8 Ω VGS = 0 V, VDS = 0 V, f = 1MHz 2
Continuous Current IS 1.6 A Note 1 2
Pulsed Current ISM 10 A Note 1 2
Forward Voltage VSD 1.5 V VGS = 0 V, ISD = 1.6 A 2

CAD (KiCad official)

  • Symbol: LN4501LT1G-HW
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ln4501lt1g-hw-etched.step / ln4501lt1g-hw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ln4501lt1g-hw.step / ln4501lt1g-hw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (7 pp, sha256 0d65899b3eccf4f7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF