component
LN2302ALT1G
Public Made by Adomby adom
LRC New Arrivals, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LN2302ALT1G
LRC · New Arrivals · SOT-23
LN2302ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage limited to ±8 V with threshold of 0.6 V min to 1.2 V max at ID = 250 µA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; maximum continuous body-diode current is 1.6 A. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage rated 20 V with continuous drain current of 2.8 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Others |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0, ID = 250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.2 | V | VDS = VGS, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=20V, VGS=0V, TJ =55℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 55 | 85 | mΩ | VGS =4.5V, ID = 2.8A | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 65 | 115 | mΩ | VGS =2.5V, ID = 2.5A | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 80 | 130 | mΩ | VGS =1.8V, ID = 2.2A | 2 | |
| Forward Voltage | VSD | 0.75 | 1.2 | V | IS =1A, VGS =0V | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | Ta = 25ºC | 1 | ||
| Gate-to-Source Voltage - Continuous | VGS | -8 | 8 | V | Ta = 25ºC | 1 | |
| Drain Current - Continuous | ID | 2.8 | A | TA = 25°C | 1 | ||
| Drain Current - Continuous | ID | 2.2 | A | TA = 70°C | 1 | ||
| Drain Current - Pulsed | IDM | 10 | A | 1 | |||
| Maximum Body-Diode Continuous Current | IS | 1.6 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | TA =25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA =70℃ | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 77 | ºC/W | T≦10 s, device mounted on 1in² FR4 board with 2 oz copper | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 105 | ºC/W | Steady State, device mounted on 1in² FR4 board with 2 oz copper | 1 | ||
| Thermal Resistance, Junction-to-Case | RΘJC | 70 | ºC/W | 1 | |||
| Input Capacitance | Ciss | 311 | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 | ||
| Output Capacitance | Coss | 33 | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 | ||
| Reverse Transfer Capacitance | Crss | 26.3 | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 | ||
| Total Gate Charge | Qg | 3.1 | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 | ||
| Gate-Source Charge | Qgs | 0.5 | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 | ||
| Gate-Drain Charge | Qgd | 0.7 | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 | ||
| Turn-On Delay Time | td(on) | 3.4 | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 | ||
| Rise Time | tr | 2.1 | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 12.5 | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 | ||
| Fall Time | tf | 2.3 | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 |
CAD (KiCad official)
- Symbol:
LN2302ALT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ln2302alt1g-etched.step/ln2302alt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ln2302alt1g.step/ln2302alt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
4ee0b1e436f28a5c, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LN2302ALT1G
**LRC** · New Arrivals · SOT-23
LN2302ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage limited to ±8 V with threshold of 0.6 V min to 1.2 V max at ID = 250 µA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; maximum continuous body-diode current is 1.6 A. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage rated 20 V with continuous drain current of 2.8 A at TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Others |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0, ID = 250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.2 | V | VDS = VGS, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS=20V, VGS=0V, TJ =55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 55 | 85 | mΩ | VGS =4.5V, ID = 2.8A | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 65 | 115 | mΩ | VGS =2.5V, ID = 2.5A | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 80 | 130 | mΩ | VGS =1.8V, ID = 2.2A | 2 |
| Forward Voltage | VSD | | 0.75 | 1.2 | V | IS =1A, VGS =0V | 2 |
| Drain-Source Voltage | VDSS | | | 20 | V | Ta = 25ºC | 1 |
| Gate-to-Source Voltage - Continuous | VGS | -8 | | 8 | V | Ta = 25ºC | 1 |
| Drain Current - Continuous | ID | | | 2.8 | A | TA = 25°C | 1 |
| Drain Current - Continuous | ID | | | 2.2 | A | TA = 70°C | 1 |
| Drain Current - Pulsed | IDM | | | 10 | A | | 1 |
| Maximum Body-Diode Continuous Current | IS | | | 1.6 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA =25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA =70℃ | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | | 77 | ºC/W | T≦10 s, device mounted on 1in² FR4 board with 2 oz copper | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | | 105 | ºC/W | Steady State, device mounted on 1in² FR4 board with 2 oz copper | 1 |
| Thermal Resistance, Junction-to-Case | RΘJC | | | 70 | ºC/W | | 1 |
| Input Capacitance | Ciss | | 311 | | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 |
| Output Capacitance | Coss | | 33 | | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 |
| Reverse Transfer Capacitance | Crss | | 26.3 | | pF | VGS = 0 V, f = 1.0MHz, VDS= 10 V | 2 |
| Total Gate Charge | Qg | | 3.1 | | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 |
| Gate-Source Charge | Qgs | | 0.5 | | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 |
| Gate-Drain Charge | Qgd | | 0.7 | | nC | VDS =10V, VGS =4.5V, ID =2.8A | 2 |
| Turn-On Delay Time | td(on) | | 3.4 | | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 |
| Rise Time | tr | | 2.1 | | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 |
| Turn-Off Delay Time | td(off) | | 12.5 | | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 |
| Fall Time | tf | | 2.3 | | ns | VDD = 10V, VGEN = 4.5V, RL = 10 Ω, RG = 6.2Ω | 2 |
## CAD (KiCad official)
- Symbol: `LN2302ALT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ln2302alt1g-etched.step` / `ln2302alt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ln2302alt1g.step` / `ln2302alt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](docs/ln2302alt1g-datasheet.pdf) (6 pp, sha256 `4ee0b1e436f28a5c`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ln2302alt1g-datasheet.pdf)