component
LMR54410FDBVR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| lmr54410fdbvr-etched.step | 1mo ago |
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| README.md | 26d ago |
LMR54410FDBVR
Texas Instruments · DC-DC Converters · SOT-23-6
LMR54410FDBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CB | passive | Bootstrap capacitor connection for the high-side FET driver; connect a 100nF quality capacitor between this pin and the SW pin. |
| 2 | GND | power_in | Power ground pin; internally connected to the source of the low-side FET; connect to system ground and the ground sides of CIN and COUT with minimum distance to CIN. |
| 3 | FB | input | Feedback input of the converter; connect resistor voltage divider to set output voltage; do not short-circuit to ground during operation. |
| 4 | EN | input | Precision enable input; cannot be left floating; high level = on, low level = off; can be connected to VIN; allows adjustable UVLO through external resistor divider. |
| 5 | VIN | power_in | Power supply input for internal bias LDO and high-side FET; connect to input power supply (4-36V) and input bypass capacitor CIN; bypass capacitor must be directly connected to this pin and GND. |
| 6 | SW | power_out | Switch output node; internally connected to the source of the high-side FET and drain of the low-side FET; connect to power inductor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-6 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VIN_UVLO rising threshold | VIN_UVLO | 3.55 | 3.75 | 4 | V | 5 | |
| VIN_UVLO falling threshold | VIN_UVLO | 3.25 | 3.45 | 3.65 | V | 5 | |
| Shutdown quiescent current, measured at VIN pin | ISD | 3 | 10 | µA | VEN = 0V | 5 | |
| Enable input high threshold (VOUT enable) | VEN-VOUT-H | 1.1 | 1.23 | 1.36 | V | VENABLE rising | 5 |
| Enable input low threshold (VOUT enable) | VEN-VOUT-L | 0.95 | 1.1 | 1.22 | V | VENABLE falling | 5 |
| Enable input leakage current | ILKG-EN | 10 | 200 | nA | VEN = 3.3V | 5 | |
| Feedback voltage | VFB | 0.79 | 0.8 | 0.81 | V | 5 | |
| Internal oscillator frequency | FOSC | 0.935 | 1.1 | 1.265 | MHz | 5 | |
| High-side current limit, LMR54410 | ISC | 1.25 | 1.6 | 1.9 | A | Open-loop production test | 5 |
| Low-side current limit, LMR54410 | ILS-LIMIT | 0.9 | 1.1 | 1.3 | A | Open-loop production test | 5 |
| Input voltage operating range | VIN | 4 | 36 | V | 7 | ||
| VOUT adjustable output regulation, FPWM operation | VOUT | -1.5 | 1.5 | % | FPWM operation; VIN = 24V, IOUT = 0A to full load | 7 | |
| VIN to GND | -0.3 | 45 | V | DC maximum | 4 | ||
| EN to GND | -0.3 | V | Max = VIN+0.3 V | 4 | |||
| FB to GND | -0.3 | 5.5 | V | 4 | |||
| SW to GND | -0.3 | V | Max = VIN+0.3 V | 4 | |||
| SW to PGND transient | -5 | V | Transient less than 10 ns; max = VIN+0.3 V | 4 | |||
| CBOOT to SW | -0.3 | 5.5 | V | 4 | |||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| VIN to GND operating voltage | 4 | 36 | V | 4 | |||
| EN to GND | 0 | V | Maximum is VIN; must not exceed VIN by more than 0.3V | 4 | |||
| Output voltage VOUT | VOUT | 0.8 | 28 | V | 4 | ||
| Output current, LMR54410 | 0 | 1 | A | 4 | |||
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 173 | °C/W | 4-layer JEDEC board per JESD 51-7; not for design use | 5 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 116 | °C/W | 5 | |||
| Junction-to-board thermal resistance | RθJB | 31 | °C/W | 5 | |||
| Junction-to-top characterization parameter | ψJT | 20 | °C/W | 5 | |||
| Junction-to-board characterization parameter | ψJB | 30 | °C/W | 5 |
CAD (KiCad official)
- Symbol:
LMR54410FDBVR - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
lmr54410fdbvr-etched.step/lmr54410fdbvr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmr54410fdbvr.step/lmr54410fdbvr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (35 pp, sha256
aa5bab2b39f730aa, retrieved 2026-09-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).