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LMR51625XDDCR

Texas Instruments · IC · TSOT-23-6

LMR51625XDDCR from Texas Instruments, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 FB input Feedback input to the converter; connect a resistor divider to set the output voltage and never short this terminal to ground during operation.
2 EN input Precision enable input (High = On, low = Off) that must not be floated, can be tied to VIN, and allows an adjustable UVLO via an external resistor divider.
3 VIN power_in Supply input to the internal bias LDO and high-side FET (4.3V to 60V operating); connect to the input supply with input bypass capacitors CIN directly between this pin and GND.
4 GND power_in Power ground connected internally to the source of the low-side FET; connect to system ground and the ground side of CIN and COUT with the shortest possible path to CIN.
5 SW passive Switching output of the converter, internally connected to the source of the high-side FET and drain of the low-side FET; connect to the power inductor.
6 CB passive Bootstrap capacitor connection for the high-side FET driver; connect a high quality 100nF capacitor from this pin to the SW pin.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-6
Category
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN to GND VIN -0.3 63 V 4
Input voltage EN to GND EN -0.3 0.3 V max printed as VIN + 0.3 4
Input voltage FB to GND FB -0.3 5.5 V 4
Output voltage SW to GND SW -0.3 63 V 4
Output voltage SW to GND transients SW -3.5 65 V less than 10ns transients 4
Output voltage CB to SW CB -0.3 5.5 V 4
Junction temperature TJ -40 150 °C 4
Storage temperature Tstg -55 150 °C 4
ESD HBM V(ESD) -1500 1500 V Human-body model, ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -750 750 V Charged-device model, ANSI/ESDA/JEDEC JS-002 4
Input voltage VIN to GND VIN 4.3 60 V 4
Input voltage EN EN 0 V max printed as VIN 4
Input voltage FB FB 0 4.5 V 4
Output voltage VOUT 0.8 30 V 4
Output current (LM51625) IOUT 2.5 A 4
Operating junction temperature TJ -40 150 °C 4
Junction-to-ambient thermal resistance RθJA 105.2 °C/W DDC (SOT-23-THN) 6 pins 5
Junction-to-ambient thermal resistance with TI EVM RθJA(effective) 48.5 °C/W 5
Junction-to-case (top) thermal resistance RθJC(top) 49.8 °C/W 5
Junction-to-board thermal resistance RθJB 24.1 °C/W 5
Junction-to-top characterization parameter ψJT 6.2 °C/W 5
Junction-to-board characterization parameter ψJB 23.9 °C/W 5
VIN quiescent current (non-switching) IQ(VIN) 26 46 µA VEN = 3V, PFM variant only 5
Input supply current when in regulation ISUPPLY 29 µA VIN = 24V, VOUT = 3.3V, IOUT = 0A, RFBT = 1MΩ, PFM variant 5
VIN shutdown supply current ISD(VIN) 2 µA VEN = 0V 5
VIN UVLO rising threshold VIN_UVLO(R) 4 4.25 V VIN rising 5
VIN UVLO falling threshold VIN_UVLO(F) 3.8 V VIN falling 5
VIN UVLO hysteresis VIN_UVLO(H) 0.2 V 5
EN voltage rising threshold VEN(R) 1.103 1.226 1.349 V EN rising, enable switching 5
EN voltage falling threshold VEN(F) 0.887 0.985 1.084 V EN falling, disable switching 5
EN pin sourcing current post EN rising threshold IEN(P2) 10 50 nA VEN = 3V 5
Reference voltage VFB 0.792 0.8 0.808 V 5
FB input leakage current IFB(LKG) 0.2 nA VFB = 0.8V 5
Switching frequency, CCM operation fSW1(CCM) 360 400 440 kHz "X" version, VIN = 24V 5
Switching frequency dithering FDither -8.5 8.5 % PFM option, frequency dithering over center frequency 5
Internal fixed soft-start time tSS 4 ms The time of internal reference to increase from 0.08V to 0.72V 5
High-side MOSFET on-resistance RDSON(HS) 85 mΩ ISW = -100mA 5
Low-side MOSFET on-resistance RDSON(LS) 45 mΩ ISW = 100mA 6
Minimum ON pulse width tON-MIN 70 ns VIN = 24V, IOUT = 1A 6
Maximum ON pulse width tON-MAX 5 µs VIN = 24V, IOUT = 1A 6
Minimum OFF pulse width tOFF-MIN 200 ns VIN = 24V 6
High-side peak current limit IHS_PK(OC) 2.9 3.7 4.5 A 2.5A version 6
Low-side valley current limit ILS_V(OC) 2.3 2.8 3.3 A 2.5A version 6
Low-side negative current limit ILS(NOC) -2 A FPWM option, 2.5A version 6
Zero-cross detection current threshold IZC 0 A 6
FB pin voltage required to trip short circuit hiccup mode VHICCUP 0.32 V 6
Time between current-limit hiccup burst tHICCUP 85 ms 6
Thermal shutdown threshold TJ(SD) 165 °C Temperature rising 6
Thermal shutdown hysteresis TJ(HYS) 20 °C 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper The SW pin connecting to the inductor must be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) must be used 22

CAD (KiCad official)

  • Symbol: LMR51625XDDCR
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: lmr51625xddcr-etched.step / lmr51625xddcr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmr51625xddcr.step / lmr51625xddcr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (34 pp, sha256 e1f7a10d36b45dc9, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF