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LMR51610YFDBVR

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TEXAS INSTRUMENTS Global Sourcing Parts, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LMR51610YFDBVR

TEXAS INSTRUMENTS · Global Sourcing Parts · SOT-23-6

LMR51610YFDBVR from TEXAS INSTRUMENTS, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CB passive Bootstrap capacitor connection for the high-side FET driver; connect a 100 nF good-quality capacitor between this pin and SW (the datasheet elsewhere recommends 0.1 µF, X7R or X5R, rated 16 V or higher).
2 GND power_in Power ground, internally connected to the low-side FET source; connect to system ground and the ground side of CIN and COUT, keeping the connection to CIN as short as possible.
3 FB input Converter feedback input; connect a resistor divider to set the output voltage, and do not short this terminal to ground during operation.
4 EN input Precision enable input that turns the converter on (high) and off (low); it must not be left floating, may be tied to VIN, and an external resistor divider can set an adjustable UVLO.
5 VIN power_in Input supply pin for the internal bias LDO and the high-side FET; connect to the input supply and input bypass capacitor CIN, which must be connected directly to this pin and GND.
6 SW power_out Converter switching output, internally connected to the high-side FET source and low-side FET drain; connect to the power inductor.

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package SOT-23-6
Category Global Sourcing Parts
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN to GND VIN -0.3 70 V 4
FB to GND FB -0.3 5.5 V 4
SW to GND SW -0.3 70 V 4
SW to GND transient SW -5 70 V transient less than 10 ns 4
CBOOT to SW CBOOT -0.3 5.5 V 4
Junction temperature TJ -40 150 °C 4
Storage temperature Tstg -55 150 °C 4
Input voltage VIN to GND VIN 4 65 V 4
FB pin voltage FB 0 4.5 V 4
Output voltage VOUT 0.8 28 V 4
Output current LMR51610 Iout 1 A LMR51610 variant 4
Operating junction temperature TJ -40 150 °C 4
EN voltage (EN to GND) EN 0 V upper limit printed as VIN 4
EN to GND EN -0.3 V upper limit printed as VIN + 0.3 V 4
Rising EN threshold (enable switching) VEN(R) 1.1 1.227 1.36 V EN rising, enables switching 5
Falling EN threshold (disable switching) VEN(F) 0.85 1 1.15 V EN falling, disables switching 5
EN pin pull current after EN rising threshold IEN(P2) 10 50 nA VEN = 3V 5
VIN shutdown supply current ISD(VIN) 0.8 3 µA VEN = 0V 5
Reference voltage Vfb 0.788 0.8 0.812 V 5
Switching frequency, CCM, Y version fSW(CCM) 0.935 1.1 1.265 Mhz CCM operation, Y version 5
High-side peak current limit IHS_PK(OC) 1.25 1.6 1.95 A LMR51610 6
Low-side valley current limit ILS_V(OC) 0.9 1.1 1.3 A LMR51610, TJ = -40°C to 105°C 6
Low-side negative current limit (FPWM only) ILS(NOC) -0.66 A LMR51610 FPWM only 6
VIN UVLO rising threshold VINUVLO(R) 3.82 4 V VIN rising 5
VIN UVLO falling threshold VINUVLO(F) 3.4 3.56 V VIN falling 5
VIN UVLO hysteresis VINUVLO(H) 0.25 V 5
VIN quiescent current, FPWM operation IQ(VIN) 420 µA VEN = 3V, FPWM operation 5
FB input leakage current IFB(LKG) 0.2 nA VFB = 0.8 V 5
Internal fixed soft-start time tSS 2.3 ms 5
High-side MOSFET on-resistance RDSON(HS) 0.7 Ω VIN = 12V, TJ = 25°C 5
Low-side MOSFET on-resistance RDSON(LS) 0.36 Ω VIN = 12V, TJ = 25°C 5
Minimum ON pulse width tON(min) 80 ns VIN = 12V, IOUT = 0.1A 5
Maximum ON pulse width tON(max) 5 µs VIN = 12V, IOUT = 0.5A 5
Minimum OFF pulse width tOFF(min) 200 ns VIN = 5V 5
Output voltage regulation accuracy VOUT -1.5 2.5 % PFM operation, VIN = 24V, IOUT = 0A to full load (printed for PFM; FPWM not separately listed) 6
FB voltage to force hiccup VHC 0.32 V 6
Maximum duty cycle DMAX 98 % 6
Switch voltage dead time tD 5 ns 6
Thermal shutdown threshold TJ(SD) 165 °C temperature rising 6
Thermal shutdown hysteresis TJ(HYS) 20 °C not production tested 6
Junction-to-ambient thermal resistance RθJA 147.8 °C/W JESD 51-7, 4-layer JEDEC board; for comparison only 5
Junction-to-ambient thermal resistance (EVM) RθJA(Effective) 95 °C/W EVM 5
Junction-to-case (top) thermal resistance RθJC(top) 71.1 °C/W 5
Junction-to-board thermal resistance RθJB 36.6 °C/W 5
Junction-to-top characterization parameter ψJT 14.2 °C/W 5
Junction-to-board characterization parameter ψJB 36.4 °C/W 5

CAD (KiCad official)

  • Symbol: LMR51610YFDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: lmr51610yfdbvr-etched.step / lmr51610yfdbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmr51610yfdbvr.step / lmr51610yfdbvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (33 pp, sha256 5c1fcf38e7a0045e, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF