component
LMBTA42LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
lmbta42lt1g: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -21,6 +21,33 @@ LMBTA42LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector–Emitter Voltage | VCEO | | | 300 | Vdc | | 1 |+| Collector–Base Voltage | VCBO | | | 300 | Vdc | | 1 |+| Emitter–Base Voltage | VEBO | | | 6 | Vdc | | 1 |+| Collector Current — Continuous | IC | | | 500 | mAdc | | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | TA = 25°C, FR-5 board | 1 |+| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | | | 556 | °C/W | FR-5 board | 1 |+| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | TA = 25°C, alumina substrate | 1 |+| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | | | 417 | °C/W | alumina substrate | 1 |+| Collector–Emitter Breakdown Voltage | V(BR)CEO | 300 | | | Vdc | IC = 1.0 mAdc, IB = 0 (LMBTA42) | 1 |+| Collector–Base Breakdown Voltage | V(BR)CBO | 300 | | | Vdc | IC = 100 µAdc, IE = 0 (LMBTA42) | 1 |+| Emitter–Base Breakdown Voltage | V(BR)EBO | 6 | | | Vdc | IE = 100 µAdc, IC = 0 | 1 |+| Collector Cutoff Current | ICBO | | | 0.1 | µAdc | VCB = 200 Vdc, IE = 0 (LMBTA42) | 1 |+| Emitter Cutoff Current | IEBO | | | 0.1 | µAdc | VEB = 6.0 Vdc, IC = 0 (LMBTA42) | 1 |+| DC Current Gain | hFE | 25 | | | | IC = 1.0 mAdc, VCE = 10 Vdc (Both Types) | 2 |+| DC Current Gain | hFE | 40 | | | | IC = 10 mAdc, VCE = 10 Vdc (Both Types) | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | 0.5 | Vdc | IC = 20 mAdc, IB = 2.0 mAdc (LMBTA42) | 2 |+| Base–Emitter Saturation Voltage | VBE(sat) | | | 0.9 | Vdc | IC = 20 mAdc, IB = 2.0 mAdc | 2 |+| Current–Gain–Bandwidth Product | fT | 50 | | | MHz | VCE = 20 Vdc, IC = 10 mA, f = 100 MHz | 2 |+| Collector–Base Capacitance | Ccb | | | 3 | pF | VCB = 20 Vdc, IE = 0, f = 1.0 MHz (LMBTA42) | 2 |+ ## CAD (KiCad official) - Symbol: `LMBTA42LT1G`
page.json+248−1@@ -147,6 +147,253 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4f28cae5709468a3",+ "rows": [+ {+ "name": "Collector–Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current — Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "TA = 25°C, FR-5 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (FR-5 Board)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TA = 25°C, alumina substrate",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (Alumina Substrate)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "alumina substrate",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 300,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mAdc, IB = 0 (LMBTA42)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 300,+ "typ": null,+ "max": null,+ "conditions": "IC = 100 µAdc, IE = 0 (LMBTA42)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE = 100 µAdc, IC = 0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µAdc",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VCB = 200 Vdc, IE = 0 (LMBTA42)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "µAdc",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VEB = 6.0 Vdc, IC = 0 (LMBTA42)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mAdc, VCE = 10 Vdc (Both Types)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mAdc, VCE = 10 Vdc (Both Types)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "IC = 20 mAdc, IB = 2.0 mAdc (LMBTA42)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "IC = 20 mAdc, IB = 2.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current–Gain–Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "VCE = 20 Vdc, IC = 10 mA, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Capacitance",+ "symbol": "Ccb",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VCB = 20 Vdc, IE = 0, f = 1.0 MHz (LMBTA42)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +435,4 @@ "visibility": { "public": true }-}+}