component
LMBTA42LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLMBTA42LT1G
LRC · Bipolar (BJT) · SOT-23
LMBTA42LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the LMBTA42LT1G NPN transistor; the datasheet gives V_BE(sat) of 0.9 Vdc max at I_C = 20 mAdc, I_B = 2.0 mAdc. |
| 2 | EMITTER | passive | Emitter terminal; the datasheet gives emitter-base voltage V_EBO of 6.0 Vdc max and emitter-base breakdown V_(BR)EBO of 6.0 Vdc min. |
| 3 | COLLECTOR | passive | Collector terminal; the datasheet gives collector-emitter voltage V_CEO of 300 Vdc for LMBTA42 and collector current I_C of 500 mAdc continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector–Emitter Voltage | VCEO | 300 | Vdc | 1 | |||
| Collector–Base Voltage | VCBO | 300 | Vdc | 1 | |||
| Emitter–Base Voltage | VEBO | 6 | Vdc | 1 | |||
| Collector Current — Continuous | IC | 500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | TA = 25°C, FR-5 board | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25°C, alumina substrate | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | 417 | °C/W | alumina substrate | 1 | ||
| Collector–Emitter Breakdown Voltage | V(BR)CEO | 300 | Vdc | IC = 1.0 mAdc, IB = 0 (LMBTA42) | 1 | ||
| Collector–Base Breakdown Voltage | V(BR)CBO | 300 | Vdc | IC = 100 µAdc, IE = 0 (LMBTA42) | 1 | ||
| Emitter–Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE = 100 µAdc, IC = 0 | 1 | ||
| Collector Cutoff Current | ICBO | 0.1 | µAdc | VCB = 200 Vdc, IE = 0 (LMBTA42) | 1 | ||
| Emitter Cutoff Current | IEBO | 0.1 | µAdc | VEB = 6.0 Vdc, IC = 0 (LMBTA42) | 1 | ||
| DC Current Gain | hFE | 25 | IC = 1.0 mAdc, VCE = 10 Vdc (Both Types) | 2 | |||
| DC Current Gain | hFE | 40 | IC = 10 mAdc, VCE = 10 Vdc (Both Types) | 2 | |||
| Collector–Emitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | IC = 20 mAdc, IB = 2.0 mAdc (LMBTA42) | 2 | ||
| Base–Emitter Saturation Voltage | VBE(sat) | 0.9 | Vdc | IC = 20 mAdc, IB = 2.0 mAdc | 2 | ||
| Current–Gain–Bandwidth Product | fT | 50 | MHz | VCE = 20 Vdc, IC = 10 mA, f = 100 MHz | 2 | ||
| Collector–Base Capacitance | Ccb | 3 | pF | VCB = 20 Vdc, IE = 0, f = 1.0 MHz (LMBTA42) | 2 |
CAD (KiCad official)
- Symbol:
LMBTA42LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lmbta42lt1g-etched.step/lmbta42lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmbta42lt1g.step/lmbta42lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
4f28cae5709468a3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).