component

LMBTA06LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LMBTA06LT1G

LRC · Bipolar (BJT) · SOT-23

LMBTA06LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the LMBTA06LT1G driver transistor; the datasheet rates emitter-base breakdown V(BR)EBO at 4.0 V minimum (IE = 100 µA) and VEBO at 4.0 V.
2 EMITTER passive Emitter terminal of the LMBTA06LT1G driver transistor; the device is rated for VCEO 80 Vdc and continuous collector current IC 500 mAdc.
3 COLLECTOR passive Collector terminal of the LMBTA06LT1G driver transistor; the device is rated for VCBO 80 Vdc and continuous collector current IC 500 mAdc, with DC current gain hFE of 100 minimum at IC = 100 mAdc, VCE = 1.0 Vdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 80 Vdc IC = 1.0 mAdc, IB = 0 (LMBTA06) 1
Emitter-Base Breakdown Voltage V(BR)EBO 4 Vdc IE = 100 µAdc, IC = 0 1
Collector Cutoff Current ICES 0.1 µAdc VCE = 60Vdc, IB = 0 1
Emitter Cutoff Current ICBO 0.1 µAdc VCB = 80Vdc, IE = 0 (LMBTA06) 1
DC Current Gain hFE 100 IC = 10 mAdc, VCE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter On Voltage VBE(sat) 1.2 Vdc IC = 100 mAdc, VCE = 1.0 Vdc 2
Current-Gain-Bandwidth Product fT 100 MHz VCE = 2.0 V, IC = 10 mA, f = 100 MHz 2
Collector-Emitter Voltage VCEO 80 Vdc 1
Collector-Base Voltage VCBO 80 Vdc 1
Emitter-Base Voltage VEBO 4 Vdc 1
Collector Current, Continuous IC 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board, TA = 25°C 1
Derate above 25°C (FR-5 Board) 1.8 mW/°C FR-5 Board, above TA = 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 Board) RθJA 556 °C/W FR-5 Board 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate, TA = 25°C 1
Derate above 25°C (Alumina Substrate) 2.4 mW/°C Alumina Substrate, above TA = 25°C 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) RθJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: LMBTA06LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbta06lt1g-etched.step / lmbta06lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbta06lt1g.step / lmbta06lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (3 pp, sha256 6dd1f95724a85e1e, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF