component
LMBT6520LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LMBT6520LT1G
LRC · Bipolar (BJT) · SOT-23
LMBT6520LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP high-voltage transistor, with base current rated at -250 mA (maximum, per the absolute maximum ratings). |
| 2 | EMITTER | passive | Emitter terminal of the PNP high-voltage transistor; emitter-base breakdown V(BR)EBO is -5.0 Vdc minimum and the emitter cutoff current is tested at V(EB) = -4.0 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP high-voltage transistor, rated for a continuous collector current of -500 mAdc with V(CEO) of -350 Vdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -350 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -350 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Base Current | IB | -250 | mA | 1 | |||
| Collector Current, Continuous | IC | -500 | mAdc | 1 | |||
| Total Device Dissipation (FR-5 board) | PD | 225 | mW | FR-5 Board, TA = 25°C | 1 | ||
| Derate above 25°C (FR-5 board) | 1.8 | mW/°C | FR-5 Board, above TA = 25°C | 1 | |||
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA | 556 | °C/W | FR-5 Board | 1 | ||
| Total Device Dissipation (Alumina substrate) | PD | 300 | mW | Alumina Substrate, TA = 25°C | 1 | ||
| Derate above 25°C (Alumina substrate) | 2.4 | mW/°C | Alumina Substrate, above TA = 25°C | 1 | |||
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RθJA | 417 | °C/W | Alumina Substrate | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -350 | Vdc | IC = -1.0 mA | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -350 | Vdc | IE = -100 µA | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -10 µA | 1 | ||
| Collector Cutoff Current | ICBO | -50 | nA | VCB = -250 V | 1 | ||
| Emitter Cutoff Current | IEBO | -50 | nA | VEB = -4.0 V | 1 | ||
| DC Current Gain | hFE | 20 | IC = -1.0 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain | hFE | 30 | IC = -10 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain | hFE | 30 | 200 | IC = -30 mAdc, VCE = -10 Vdc | 2 | ||
| DC Current Gain | hFE | 20 | 200 | IC = -50 mAdc, VCE = -10 Vdc | 2 | ||
| DC Current Gain | hFE | 15 | IC = -100 mAdc, VCE = -10 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.35 | Vdc | IC = -20 mAdc, IB = -2.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | Vdc | IC = -30 mAdc, IB = -3.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1 | Vdc | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.75 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.85 | Vdc | IC = -20 mAdc, IB = -2.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | Vdc | IC = -30 mAdc, IB = -3.0 mAdc | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -2 | Vdc | IC = -100 mAdc, VCE = -10 V | 2 | ||
| Current Gain-Bandwidth Product | fT | 40 | 200 | MHz | VCE = -20 V, IC = -10 mA, f = 20 MHz | 2 | |
| Collector-Base Capacitance | Ccb | 6 | pF | VCB = -20 V, f = 1.0 MHz | 2 | ||
| Emitter-Base Capacitance | Ceb | 100 | pF | VEB = -0.5 V, f = 1.0 MHz | 2 |
CAD (KiCad official)
- Symbol:
LMBT6520LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lmbt6520lt1g-etched.step/lmbt6520lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmbt6520lt1g.step/lmbt6520lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
8460af37fe011a3d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LMBT6520LT1G
**LRC** · Bipolar (BJT) · SOT-23
LMBT6520LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP high-voltage transistor, with base current rated at -250 mA (maximum, per the absolute maximum ratings). |
| 2 | EMITTER | passive | Emitter terminal of the PNP high-voltage transistor; emitter-base breakdown V(BR)EBO is -5.0 Vdc minimum and the emitter cutoff current is tested at V(EB) = -4.0 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP high-voltage transistor, rated for a continuous collector current of -500 mAdc with V(CEO) of -350 Vdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | | | -350 | Vdc | | 1 |
| Collector-Base Voltage | VCBO | | | -350 | Vdc | | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | Vdc | | 1 |
| Base Current | IB | | | -250 | mA | | 1 |
| Collector Current, Continuous | IC | | | -500 | mAdc | | 1 |
| Total Device Dissipation (FR-5 board) | PD | | | 225 | mW | FR-5 Board, TA = 25°C | 1 |
| Derate above 25°C (FR-5 board) | | | | 1.8 | mW/°C | FR-5 Board, above TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA | | | 556 | °C/W | FR-5 Board | 1 |
| Total Device Dissipation (Alumina substrate) | PD | | | 300 | mW | Alumina Substrate, TA = 25°C | 1 |
| Derate above 25°C (Alumina substrate) | | | | 2.4 | mW/°C | Alumina Substrate, above TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RθJA | | | 417 | °C/W | Alumina Substrate | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -350 | | | Vdc | IC = -1.0 mA | 1 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -350 | | | Vdc | IE = -100 µA | 1 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | Vdc | IE = -10 µA | 1 |
| Collector Cutoff Current | ICBO | | | -50 | nA | VCB = -250 V | 1 |
| Emitter Cutoff Current | IEBO | | | -50 | nA | VEB = -4.0 V | 1 |
| DC Current Gain | hFE | 20 | | | | IC = -1.0 mAdc, VCE = -10 Vdc | 2 |
| DC Current Gain | hFE | 30 | | | | IC = -10 mAdc, VCE = -10 Vdc | 2 |
| DC Current Gain | hFE | 30 | | 200 | | IC = -30 mAdc, VCE = -10 Vdc | 2 |
| DC Current Gain | hFE | 20 | | 200 | | IC = -50 mAdc, VCE = -10 Vdc | 2 |
| DC Current Gain | hFE | 15 | | | | IC = -100 mAdc, VCE = -10 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.35 | Vdc | IC = -20 mAdc, IB = -2.0 mAdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.5 | Vdc | IC = -30 mAdc, IB = -3.0 mAdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -1 | Vdc | IC = -50 mAdc, IB = -5.0 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.75 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.85 | Vdc | IC = -20 mAdc, IB = -2.0 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | Vdc | IC = -30 mAdc, IB = -3.0 mAdc | 2 |
| Base-Emitter On Voltage | VBE(on) | | | -2 | Vdc | IC = -100 mAdc, VCE = -10 V | 2 |
| Current Gain-Bandwidth Product | fT | 40 | | 200 | MHz | VCE = -20 V, IC = -10 mA, f = 20 MHz | 2 |
| Collector-Base Capacitance | Ccb | | | 6 | pF | VCB = -20 V, f = 1.0 MHz | 2 |
| Emitter-Base Capacitance | Ceb | | | 100 | pF | VEB = -0.5 V, f = 1.0 MHz | 2 |
## CAD (KiCad official)
- Symbol: `LMBT6520LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lmbt6520lt1g-etched.step` / `lmbt6520lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lmbt6520lt1g.step` / `lmbt6520lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588946887831392256) (6 pp, sha256 `8460af37fe011a3d`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lmbt6520lt1g-datasheet.pdf)