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LMBT6427LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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LMBT6427LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT6427LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN Darlington transistor, with emitter-base voltage rated at 12 Vdc maximum (VEBO).
2 EMITTER passive Emitter of the NPN Darlington transistor, which is rated for a collector-emitter voltage of 40 Vdc (VCEO) and a continuous collector current of 500 mAdc.
3 COLLECTOR passive Collector of the NPN Darlington transistor, with collector-base voltage rated at 40 Vdc (VCBO) and continuous collector current of 500 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V (BR)CEO 40 Vdc IC = 10 mAdc, VBE = 0 1
Collector-Base Breakdown Voltage V (BR)CBO 40 Vdc IC = 100 µAdc, IE = 0 1
Emitter-Base Breakdown Voltage V (BR)EBO 12 Vdc IE = 10 µAdc, IC = 0 1
Collector Cutoff Current ICES 1 µAdc VCE = 25 Vdc, IB = 0 1
Collector Cutoff Current ICBO 50 nAdc VCB = 30 Vdc, IE = 0 1
Emitter Cutoff Current IEBO 50 nAdc VEB = 10 Vdc, IC = 0 1
DC Current Gain hFE 10000 100000 IC = 10 mAdc, VCE = 5.0 Vdc 2
DC Current Gain hFE 20000 200000 IC = 100 mAdc, VCE = 5.0 Vdc 2
DC Current Gain hFE 14000 140000 IC = 500 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 1.2 Vdc IC = 50 mAdc, IB = 0.5 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 1.5 Vdc IC = 500 mAdc, IB = 0.5 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 0.5 mAdc 2
Base-Emitter On Voltage VBE(on) 1.75 Vdc IC = 50 mAdc, VCE = 5.0 Vdc 2
Output Capacitance Cobo 7 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 15 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Current Gain-High Frequency /hfe/ 1.3 Vdc VCE = 5.0 Vdc, IC = 10 mAdc, f = 100 MHz 2
Noise Figure NF 10 dB VCE = 5.0 Vdc, IC = 1.0 mAdc, RS = 100 kΩ, f = 1.0 kHz 2
Collector-Emitter Voltage VCEO 40 Vdc 1
Collector-Base Voltage VCBO 40 Vdc 1
Emitter-Base Voltage VEBO 12 Vdc 1
Collector Current, Continuous IC 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 225 mW FR-5 board, TA = 25°C 1
Total Device Dissipation PD 300 mW Alumina substrate, TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 556 °C/W FR-5 board 1
Thermal Resistance, Junction to Ambient RθJA 417 °C/W Alumina substrate 1

CAD (KiCad official)

  • Symbol: LMBT6427LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt6427lt1g-etched.step / lmbt6427lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt6427lt1g.step / lmbt6427lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 4a3c1f4c0270e295, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF