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Contents

README

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LMBT5551

LangJie · Bipolar Transistors - BJT · SOT-23

LMBT5551 from LangJie, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal controls the transistor; the datasheet's emitter-base voltage rating is VEBO 6.0 Vdc.
2 EMITTER passive Emitter terminal; the datasheet's emitter-base voltage rating is VEBO 6.0 Vdc and continuous collector current is limited to 600 mAdc.
3 COLLECTOR passive Collector terminal; for the LMBT5551 the datasheet gives VCEO 160 Vdc, VCBO 180 Vdc and continuous collector current 600 mAdc.

Key specifications

Parameter Value
Manufacturer LangJie
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 160 Vdc IC = 1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 180 Vdc IC = 100 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 50 Adc VCB = 120 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 50 nAdc VEB = 4.0 Vdc, IC = 0 2
DC Current Gain hFE 80 IC = 1.0 mAdc, VCE = 5.0 Vdc 2
DC Current Gain hFE 80 250 IC = 10 mAdc, VCE = 5.0 Vdc 2
DC Current Gain hFE 30 IC = 50 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.15 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 Vdc IC = 50 mAdc, IB = 5.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 1 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Collector Emitter Cut-off Current ICES 50 nA VCB = 10 V 2
Collector Emitter Cut-off Current ICES 100 nA VCB = 75 V 2
Collector-Emitter Voltage VCEO 160 Vdc 1
Collector-Base Voltage VCBO 180 Vdc 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 600 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1) @TA = 25°C 1
Derate Above 25°C FR-5 Board PD 1.8 mW/°C FR-5 Board, derate above 25°C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2) @TA = 25°C 1
Derate Above 25°C Alumina Substrate PD 2.4 mW/°C Alumina Substrate, derate above 25°C 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: LMBT5551
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt5551-etched.step / lmbt5551-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt5551.step / lmbt5551.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LangJie datasheet (5 pp, sha256 b9a5a35fe0c79ad8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF