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page.json lmbt5401lt1g: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 23d ago
README.md lmbt5401lt1g: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 23d ago

LMBT5401LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT5401LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the transistor; the device maximum ratings are V_CEO -150 Vdc, V_CBO -160 Vdc, V_EBO -5.0 Vdc and continuous collector current I_C -500 mAdc.
2 EMITTER passive Emitter terminal; the emitter-base breakdown voltage V(BR)EBO is -5.0 Vdc minimum at I_E = -10 µAdc.
3 COLLECTOR passive Collector terminal; the datasheet limits collector-emitter voltage V_CEO to -150 Vdc and collector-base voltage V_CBO to -160 Vdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Voltage V CEO -150 Vdc 1
Collector–Base Voltage V CBO -160 Vdc 1
Emitter–Base Voltage V EBO -5 Vdc 1
Collector Current — Continuous I C -500 mAdc 1
Junction and Storage Temperature T J , Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) P D 225 mW T A = 25°C, FR-5 board 1
Thermal Resistance, Junction to Ambient (FR-5 Board) R θJA 556 °C/W FR-5 board 1
Total Device Dissipation (Alumina Substrate) P D 300 mW Alumina substrate, T A = 25°C 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) R θJA 417 °C/W Alumina substrate 1
Collector–Emitter Breakdown Voltage V(BR)CEO -150 Vdc I C = –1.0 mAdc, I B = 0 1
Collector–Base Breakdown Voltage V(BR)CBO -160 Vdc I C = –100 µAdc, I E = 0 1
Emitter–Base Breakdown Voltage V(BR)EBO -5 Vdc I E = –10 µAdc, I C = 0 1
Collector Cutoff Current I CBO -50 nAdc V CB = –120 Vdc, I E = 0 1
Collector Cutoff Current I CBO -50 µAdc V CB = –120 Vdc, I E = 0, T A = 100 °C 1
DC Current Gain hFE 50 — I C = –1.0 mAdc, V CE = –5.0 Vdc 2
DC Current Gain hFE 60 240 — I C = –10 mAdc, V CE = –5.0 Vdc 2
Collector–Emitter Saturation Voltage VCE(sat) -0.2 Vdc I C = –10 mAdc, I B = –1.0 mAdc 2
Collector–Emitter Saturation Voltage VCE(sat) -0.5 Vdc I C = –50 mAdc, I B = –5.0 mAdc 2
Base–Emitter Saturation Voltage VBE(sat) -1 Vdc I C = –10 mAdc, I B = –1.0 mAdc 2
Current–Gain — Bandwidth Product fT 100 300 MHz I C = –10 mAdc, V CE = –10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 6 pF V CB = –10 Vdc, I E = 0, f = 1.0 MHz 2
Small–Signal Current Gain hfe 40 200 — I C = –1.0 mAdc, V CE = –10 Vdc, f = 1.0 kHz 2
Noise Figure NF 8 dB I C = –200 µAdc, V CE = –5.0 Vdc, Rs = 10 Ω, f = 1.0 kHz 2

CAD (KiCad official)

  • Symbol: LMBT5401LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt5401lt1g-etched.step / lmbt5401lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt5401lt1g.step / lmbt5401lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 820bf560795c6961, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF